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SEMICONDUCTOR TECHNICAL DATA

  


 
 
 
 
 

COLLECTOR
3

COLLECTOR
3
2
BASE

2
BASE
NPN

PNP
1
EMITTER

1
EMITTER

MAXIMUM RATINGS
Symbol

2N6515

2N6519

2N6517
2N6520

Unit

Collector Emitter Voltage

VCEO

250

300

350

Vdc

Collector Base Voltage

VCBO

250

300

350

Vdc

Emitter Base Voltage

2N6515, 2N6516, 2N6517
2N6519, 2N6520

VEBO

Rating

Vdc
6.0
5.0

Base Current

IB

250

mAdc

Collector Current Continuous

IC

500

mAdc

Total Device Dissipation

@ TA = 25C
Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation

@ TC = 25C
Derate above 25C

PD

1.5
12

Watts
mW/C

TJ, Tstg

55 to +150

Operating and Storage Junction

Temperature Range

Voltage and current are negative

for PNP transistors

1
2

CASE 2904, STYLE 1

TO92 (TO226AA)

THERMAL CHARACTERISTICS
Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

C/W

Thermal Resistance, Junction to Case

RqJC

83.3

C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Characteristic

Min

Max

250
300
350

250
300
350

6.0
5.0

Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)

Collector Base Breakdown Voltage

(IC = 100 Adc, IE = 0 )

Emitter Base Breakdown Voltage

(IE = 10 Adc, IC = 0)

V(BR)CEO
2N6515
2N6519
2N6517, 2N6520

Vdc

V(BR)CBO
2N6515
2N6519
2N6517, 2N6520

Vdc

V(BR)EBO
2N6515, 2N6517
2N6519, 2N6520

Vdc

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997


   

   
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Symbol

Min

Max

50
50
50

50
50

2N6515
2N6519
2N6517, 2N6520

35
30
20

(IC = 10 mAdc, VCE = 10 Vdc)

2N6515
2N6519
2N6517, 2N6520

50
45
30

(IC = 30 mAdc, VCE = 10 Vdc)

2N6515
2N6519
2N6517, 2N6520

50
45
30

300
270
200

(IC = 50 mAdc, VCE = 10 Vdc)

2N6515
2N6519
2N6517, 2N6520

45
40
20

220
200
200

(IC = 100 mAdc, VCE = 10 Vdc)

2N6515
2N6519
2N6517, 2N6520

25
20
15

0.30
0.35
0.50
1.0

0.75
0.85
0.90

Characteristic

Unit

OFF CHARACTERISTICS (Continued)

Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
(VCB = 200 Vdc, IE = 0)
(VCB = 250 Vdc, IE = 0)

2N6515
2N6519
2N6517, 2N6520

ICBO

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)

2N6515, 2N6517
2N6519, 2N6520

nAdc

IEBO

nAdc

ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)

hFE

Collector Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

Vdc

Base Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 20 mAdc, IB = 2.0 mAdc)
(IC = 30 mAdc, IB = 3.0 mAdc)

VBE(sat)

BaseEmitter On Voltage
(IC = 100 mAdc, VCE = 10 Vdc)

VBE(on)

2.0

Vdc

fT

40

200

MHz

Ccb

6.0

pF

80
100

Vdc

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product(1)
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
EmitterBase Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb
2N6515, 2N6517
2N6519, 2N6520

pF

SWITCHING CHARACTERISTICS
TurnOn Time
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc)

ton

200

TurnOff Time
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc)

toff

3.5

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

Motorola SmallSignal Transistors, FETs and Diodes Device Data


   

   
NPN

PNP

2N6515

2N6519
200

VCE = 10 V

TJ = 125C

100

hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

200

25C

70
55C
50

30
20
1.0

VCE = 10 V

TJ = 125C
25C

100
70

55C

50

30

2.0

3.0

5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

20
1.0

70 100

2.0 3.0 5.0 7.0 10

20 30
IC, COLLECTOR CURRENT (mA)

50 70 100

Figure 1. DC Current Gain

2N6517

2N6520
200

200
TJ = 125C

VCE = 10 V

100

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

VCE = 10 V

25C

70
50

55C
30
20

10
1.0

2.0

3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

100

25C

70
55C
50
30
20

10
1.0

50 70 100

TJ = 125C

2.0 3.0 5.0 7.0 10

20 30
IC, COLLECTOR CURRENT (mA)

50 70 100

2N6515, 2N6517
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz

30
20

10
1.0

2.0

3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50 70

100

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

Figure 2. DC Current Gain

2N6519, 2N6520
100
70
50
TJ = 25C
VCE = 20 V
f = 20 MHz

30
20

10
1.0

2.0 3.0 5.0 7.0 10

20 30
IC, COLLECTOR CURRENT (mA)

50 70 100

Figure 3. CurrentGain Bandwidth Product

Motorola SmallSignal Transistors, FETs and Diodes Device Data


   

   
NPN

PNP

2N6515, 2N6517

2N6519, 2N6520

1.4

1.4
TJ = 25C

1.2

1.2

0.8

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

1.0
VBE(sat) @ IC/IB = 10

0.6

VBE(on) @ VCE = 10 V

0.4
0.2
0
1.0

3.0

1.0
0.8

VBE(sat) @ IC/IB = 10

0.6

VBE(on) @ VCE = 10 V

0.4
0.2

VCE(sat) @ IC/IB = 10
2.0

TJ = 25C

VCE(sat) @ IC/IB = 5.0

5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)

VCE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 5.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)

0
1.0

Figure 4. On Voltages

IC
IB

2.0
1.5

+ 10
25C to 125C

1.0
0.5
0

2N6519, 2N6520
RV, TEMPERATURE COEFFICIENTS (mV/C)

RV, TEMPERATURE COEFFICIENTS (mV/C)

2N6515, 2N6517
2.5

RVC for VCE(sat)

55C to 25C

0.5
1.0
1.5
2.0
2.5
1.0

55C to 125C
RVB for VBE

2.0

3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

70

100

2.5
IC
IB

2.0
1.5

+ 10
25C to 125C

1.0
0.5

RVB for VBE

55C to 25C

0
0.5
1.0
1.5

RVC for VCE(sat)

55C to 125C

2.0
2.5
1.0

2.0 3.0 5.0 7.0 10

20 30
IC, COLLECTOR CURRENT (mA)

50 70 100

Figure 5. Temperature Coefficients

2N6515, 2N6517

2N6519, 2N6520
100
70
50

TJ = 25C
Ceb

30

C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

100
70
50

20
10
7.0
5.0

Ccb

20
10
7.0
5.0
3.0

2.0

2.0

0.5

1.0 2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)

50 100 200

TJ = 25C

30

3.0

1.0
0.2

Ceb

1.0
0.2

Ccb

0.5 1.0 2.0

5.0 10 20
50 100 200
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

Motorola SmallSignal Transistors, FETs and Diodes Device Data


   

   
NPN

PNP

2N6515, 2N6517
1.0 k
700
500

2N6519, 2N6520
1.0 k
700
500

VCE(off) = 100 V
IC/IB = 5.0
TJ = 25C

td @ VBE(off) = 2.0 V

300

300
200
t, TIME (ns)

t, TIME (ns)

200
tr
100
70
50
30

30
20

2.0

3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

70 100

tr

100
70
50

20
10
1.0

VCE(off) = 100 V
IC/IB = 5.0
TJ = 25C

td @ VBE(off) = 2.0 V

10
1.0

2.0 3.0 5.0 7.0 10

20 30
IC, COLLECTOR CURRENT (mA)

50 70 100

Figure 7. TurnOn Time

2N6515, 2N6517
10 k
7.0 k
5.0 k

2N6519, 2N6520
2.0 k
ts

ts

1.0 k
700

3.0 k

500

t, TIME (ns)

2.0 k
1.0 k
700
500

tf

300

VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C

200

tf

VCE(off) = 100 V
IC/IB = 5.0
IB1 = IB2
TJ = 25C

100
70
50

300
200

30
100
1.0

2.0 3.0

5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

70 100

20
1.0

2.0 3.0 5.0 7.0 10

20 30
IC, COLLECTOR CURRENT (mA)

50 70 100

Figure 8. TurnOff Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data


   

   
+VCC
VCC ADJUSTED
FOR VCE(off) = 100 V

+10.8 V

2.2 k

20 k

50 SAMPLING SCOPE

1.0 k
50
1/2MSD7000

9.2 V
PULSE WIDTH 100 s
tr, tf 5.0 ns
DUTY CYCLE 1.0%
FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES

APPROXIMATELY
1.35 V

(ADJUST FOR V(BE)off = 2.0 V)

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

Figure 9. Switching Time Test Circuit

1.0
0.7
0.5

D = 0.5
0.2

0.3
0.2

SINGLE PULSE

0.05

0.1
0.1
0.07
0.05

SINGLE PULSE
ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t)
ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)

0.03
0.02
0.01
0.1

0.2

0.5

1.0

2.0

5.0

10

20
50
t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 10. Thermal Response

IC, COLLECTOR CURRENT (mA)

500
TA = 25C

200
100

PP

PP

100 ms

20
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25C)
SECOND BREAKDOWN LIMIT

10
5.0
2.0

CURVES APPLY
BELOW RATED VCEO

1.0
0.5
0.5

1.0

t1

2N6515
2N6519
2N6517, 2N6520

2.0
5.0
10
20
50 100 200
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 11. Active Region Safe Operating Area

tP

1.0 ms

TC = 25C

50

FIGURE A

10 s

100 s

1/f
DUTY CYCLE
500

+ t1 f + ttP1

PEAK PULSE POWER = PP

Design Note: Use of Transient Thermal Resistance Data

Motorola SmallSignal Transistors, FETs and Diodes Device Data


   

   
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
D
J

X X
G
H
V

SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

Motorola SmallSignal Transistors, FETs and Diodes Device Data

DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR


   

   

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2N6515/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data