SEMICONDUCTOR

KF5N50P/F/PZ/FZ

TECHNICAL DATA

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

General Description

KF5N50P, KF5N50PZ
A

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.

O
C
F

G
B
Q

FEATURES

VDSS= 500V, ID= 5.0A

Drain-Source ON Resistance : RDS(ON)=1.4 @VGS = 10V

Qg(typ) = 12nC

J
D
N

MAXIMUM RATING (Tc=25)

RATING
KF5N50P
KF5N50PZ

KF5N50F
KF5N50FZ

UNIT

Drain-Source Voltage

VDSS

500

Gate-Source Voltage

VGSS

30

Tc=25

Drain Power
Dissipation

13*

KF5N50F, KF5N50FZ
A

mJ

EAR

8.6

mJ

dv/dt

4.5

270

Derate above 25

Storage Temperature Range

13

EAS

PD

Maximum Junction Temperature

2.9*

TO-220AB

E
B

Single Pulsed Avalanche Energy

(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)

IDP

2.9

1. GATE
2. DRAIN
3. SOURCE

Pulsed (Note1)

ID

5.0*

83

V/ns
41.5

0.66

0.33

W
W/

Tj

150

Tstg

-55150

M
D

Thermal Characteristics

Thermal Resistance, Junction-to-Case

RthJC

1.5

3.0

/W

Thermal Resistance, Junction-toAmbient

RthJA

62.5

62.5

/W

@TC=100

Drain Current

5.0

@TC=25

SYMBOL

CHARACTERISTIC

DIM MILLIMETERS
_ 0.2
9.9 +
A
15.95 MAX
B
1.3+0.1/-0.05
C
_ 0.1
D
0.8 +
_ 0.2
E
3.6 +
_ 0.1
F
2.8 +
3.7
G
H
0.5+0.1/-0.05
1.5
I
_ 0.3
13.08 +
J
K
1.46
_ 0.1
1.4 +
L
_ 0.1
1.27+
M
_ 0.2
2.54 +
N
_ 0.2
4.5 +
O
_ 0.2
2.4 +
P
_ 0.2
9.2 +
Q

DIM

MILLIMETERS

A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S

_ 0.3
10.0 +
_ 0.3
15.0 +
_ 0.3
2.70 +
0.76+0.09/-0.05
_ 0.2
3.2 +
_ 0.3
3.0 +
_ 0.3
12.0 +
0.5+0.1/-0.05
_ 0.5
13.6 +
_ 0.2
3.7 +
1.2+0.25/-0.1
1.5+0.25/-0.1
_ 0.1
2.54 +
_ 0.1
6.8 +
_ 0.2
4.5 +
_ 0.2
2.6 +
0.5 Typ

1. GATE
2. DRAIN
3. SOURCE

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

TO-220IS

(KF5N50P, KF5N50F)

(KF5N50PZ, KF5N50FZ)
D

G
G
S

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Revision No : 0

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KF5N50P/F/PZ/FZ
ELECTRICAL CHARACTERISTICS (Tc=25)
CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

500

ID=250, Referenced to 25

0.55

V/

Static
BVDSS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient BVDSS/Tj

ID=250 , VGS=0V

Drain Cut-off Current

IDSS

VDS=500V, VGS=0V,

10

Gate Threshold Voltage

Vth

VDS=VGS, ID=250

2.0

4.0

Gate Leakage Current

IGSS
RDS(ON)

Drain-Source ON Resistance

KF5N50P/F

VGS=30V, VDS=0V

100

nA

KF5N50PZ/FZ

VGS=25V, VDS=0V

10

1.15

1.4

12

2.4

5.4

22.5

29

58

VGS=10V, ID=2.5A

Dynamic
Qg

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-on Delay time

td(on)

td(off)

Turn-off Delay time

VGS=10V

(Note4,5)

VDD=250V

tr

Turn-on Rise time

VDS=400V, ID=5A

RL=50

nC

ns

RG=25

(Note4,5)

Turn-off Fall time

tf

18

Input Capacitance

Ciss

430

Output Capacitance

Coss

71

Reverse Transfer Capacitance

Crss

7.5

20

VDS=25V, VGS=0V, f=1.0MHz

pF

Source-Drain Diode Ratings

Continuous Source Current

IS

Pulsed Source Current

ISP

Diode Forward Voltage

VSD

IS=5A, VGS=0V

1.4

Reverse Recovery Time

trr

IS=5A, VGS=0V,

150

ns

Reverse Recovery Charge

Qrr

dIs/dt=100A/

0.42

VGS<Vth

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25, Starting Tj=25.
Note 3) IS5A, dI/dt100A/, VDDBVDSS, Starting Tj=25.
Note 4) Pulse Test : Pulse width 300, Duty Cycle2%.
Note 5) Essentially independent of operating temperature.

Marking

1
1

KF5N50
801
P

KF5N50
813
F

1
2

KF5N50
801
PZ

KF5N50
813
FZ

1 PRODUCT NAME
2 LOT NO

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Revision No : 0

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KF5N50P/F/PZ/FZ

Fig1. ID - VDS

Fig2. ID - VGS
VDS=30V

Drain Current ID (A)

Drain Current ID (A)

100

VGS=10V

10

VGS=7V

VGS=5V

10

TC=100 C

10

25 C

-1

0.1

10
0.1

10

100

Drain - Source Voltage VDS (V)

On - Resistance RDS(ON) ()

Normalized Breakdown Voltage BVDSS

3.0

1.1

1.0

0.9

-50

50

100

2.5
VGS=6V

2.0
1.5
VGS=10V

1.0
0.5
0
0

150

Junction Temperature Tj ( C )

3.0

Normalized On Resistance

Reverse Drain Current IS (A)

10

TC=100 C
25 C
0

10

-1

0.4

0.6

0.8

1.0

1.2

1.4

Source - Drain Voltage VSD (V)

2008. 11. 19

Revision No : 0

10

12

Fig6. RDS(ON) - Tj

10

0.2

Drain Current ID (A)

Fig5. IS - VSD

10

10

Fig4. RDS(ON) - ID

VGS = 0V
IDS = 250

0.8
-100

Gate - Source Voltage VGS (V)

Fig3. BVDSS - Tj
1.2

1.6

1.8

2.5

VGS =10V
IDS = 2.5A

2.0
1.5
1.0
0.5
0.0
-100

-50

50

100

150

Junction Temperature Tj ( C)

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KF5N50P/F/PZ/FZ

Fig 7. C - VDS

Fig8. Qg- VGS

12

Capacitance (pF)

Ciss
100
Coss

10
Crss

1
0

10

15

20

25

30

35

Gate - Source Voltage VGS (V)

1000

ID=5A

10
8

VDS = 400V
VDS = 250V

VDS = 100V

4
2
0
2

40

(KF5N50P, KF5N50PZ)

12

14

16

(KF5N50F, KF5N50FZ)

102 Operation in this

area is limited by RDS(ON)

101

100s
1ms

100

10ms
100ms
DC

10-1
Tc= 25 C
Tj = 150 C
2 Single pulse

Drain Current ID (A)

area is limited by RDS(ON)

Drain Current ID (A)

10

Fig10. Safe Operation Area

Fig9. Safe Operation Area

10
100

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

102 Operation in this

101
100s

100

1ms
10ms
100ms

10-1

DC

Tc= 25 C
Tj = 150 C
2 Single pulse

102

101

103

10
100

101

102

103

Drain - Source Voltage VDS (V)

Drain - Source Voltage VDS (V)

Fig11. ID - Tj
6

Drain Current ID (A)

5
4
3
2
1
0
0

25

50

75

100

125

150

Junction Temperature Tj ( C)

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KF5N50P/F/PZ/FZ

Fig12. Transient Thermal Response Curve

(KF5N50P. KF5N50PZ)
100

Transient Thermal Resistance

Duty=0.5

0.2

10-1

PDM

0.1

t1
0.05

t2

0.02

gle

e
uls

- Duty Factor, D= t1/t2

Sin

0.0

- RthJC =

10-2
10-5

10-4

10-3

10-2

10-1

Tj(max) - Tc
PD
100

101

TIME (sec)

Fig13. Transient Thermal Response Curve

(KF5N50F. KF5N50FZ)

Transient Thermal Resistance

Duty=0.5

100

0.2

0.1

0.05

10-1

PDM

0.02

t1
0.01
P
gle

t2

uls

- Duty Factor, D= t1/t2

Tj(max) - Tc
- RthJC =
PD

Sin

10-2
10-5

10-4

10-3

10-2

10-1

100

101

TIME (sec)

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KF5N50P/F/PZ/FZ

Fig14. Gate Charge

VGS
10 V

Fast
Recovery
Diode

ID

0.8 VDSS

ID
1.0 mA
Q

VDS

Qgd

Qgs

Qg
VGS

Fig15. Single Pulsed Avalanche Energy

1
EAS=
LIAS2
2

BVDSS
BVDSS - VDD

BVDSS
L

IAS
50V
25
ID(t)

VDS
VGS

10 V

VDD

VDS(t)

Time
tp

Fig16. Resistive Load Switching

VDS
90%
RL

0.5 VDSS

VGS 10%
25
VDS
10V

2008. 11. 19

VGS

Revision No : 0

td(on)
ton

tr

td(off)
tf
toff

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KF5N50P/F/PZ/FZ

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

Body Diode Forword Current

DUT
VDS
IF

ISD
(DUT)

di/dt
IRM

IS

0.5

VDSS

Body Diode Reverse Current

VDS
(DUT)
driver

Body Diode Recovery dv/dt

VSD
VDD

10V

2008. 11. 19

VGS

Revision No : 0

Body Diode Forword Voltage drop

7/7