Hacettepe University

Electrical and Electronics Engineering Department

ELE 454 Power Electronics
Homework No. 2
Due: 9 March 2016
Q1. A power MOSFET is used as a switch, with associated voltage and current waveforms
given in Fig. 1. The parameters are drain-to-source voltage Vd = 100V in off-state, drain current
Io = 20 A in on-state, drain-to-source on-state resistance Rds(on)=20 m, and the switching
frequency, fs =100 kHz . At turn-on, voltage fall-time, tfv= 25 ns, current rise time tri =50 ns,
and at turn-off, voltage rise time trv = 75 ns, current fall-time tfi = 25 ns, The operating duty
cycle (D =ton/Ts, where Ts is the switching period) of the transistor, D=40%.
A. Determine the power loss due to the drain current:
i- During turn-on, tc(on)
ii- During conduction period tcond ,
iii- During turn-off, tc(off)
iii. Total mean power loss PT

Fig. 1. Switching waveforms of power transistor

B. The maximum junction temperature of the power MOSFET is Tj=150C, and the
maximum ambient temperature TA = 40C. If the junction-to-case and case-to-heatsink
thermal resistances are RJ-C = 1.6 K/W and RC-H = 0.4 K/W, respectively, calculate the
required thermal resistance of the heat-sink, RH-A.
C. The power transistor above is subject to a short-time overload during transient operation.
Junction-to-case thermal impedance against pulse duration characteristic of the transistor is
given in Fig. 2. Let the ambient temperature be TA = 40C.
i. If the transistor is subject to a single heating power pulse of PDM = 600 W during 50 s time,
calculate the peak value of the junction temperature at the end of the pulse. Assume that the
heat sink has a very large thermal storage capacity and that the case temperature remains
constant at TC = 40C during this short-time pulse duration.
ii- By considering that the operating duty cycle of the transistor is D=0.1, calculate the peak
value of the junction temperature rise above the case temperature for the power pulse in (i)
applied repetetively. Comment on the result.

D=

Fig.2. Junction-to-case thermal impedance against pulse duration characteristic of

the power transistor