i SGS-THOMSON JF, iichoELecrRaMes SGS35MA050D1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE Voss _| _Rosion) ly ‘SGS3MAIEOD'! SOOV | O16 | 35A * ISOLATED POWERMOS MODULE * HIGH POWER: * FAST SWITCHING © EASY DRIVE * EASY TO PARALLEL INDUSTRIAL APPLICATIONS: * SWITCHING MODE POWER SUPPLIES * UNINTERRUPTIBLE POWER SUPPLIES N-channel enhancement mode POWER MOS field TO-240 effect transistor. Easy drive and fast switching of this ‘TRANSPACK module make it ideal for high power, high speed switching applications. Typical applica- tions include DC motor contro! (variable frequen- cy control) switching mode power supplies, INTERNAL SCHEMATIC uninterruptible power supplies, DC/DC convertors DIAGRAM and high frequency welding equipment. The large RBSOA and absence of second breakdown in PO- WER MOS make this TRANSPACK module very | rugged. This, together with the isolated package ° with its optimised thermal performance, make this module extremely effective in high power appli- 8 cations. ABSOLUTE MAXIMUM RATINGS Vos Drain-source voltage (Veg =0) 500 v Voor Drain-gate voltage (Rag =20 Ka) 500 v Ves Gate-source voltage £20 v ly Drain current (cont,) at T,=25°C 36 A Ip Drain current (cont,) at T, =100°C 22 A low Drain current (pulsed) 140 A Prot Total dissipation at T, <25°C 400 w Derating factor 32 wec Tg Storage temperature 65 to 150 °c 1 Max. operating junction temperature 150 °c Viso _Insulation withstand voltage (AC) 2500 vSGS35MA050D1 THERMAL DATA Rtnj case Thermal resistance junction-case max 031 °C Rinc-n Thermal resistance case-heatsink max 020 °CcIWw ELECTRICAL CHARACTERISTICS (T,= 25°C unless otherwise specified) 1 Parameters t Test Conditions Min. | Typ. | Max. | Unit OFF Ver) oss Drain-source Ip= 2mA Ves= 0 500 v breakdown voltage loss Zero gate voltage Max Rating 500 | nA drain current (Vgg=0) | Vpg= Max Rating x 0.8 T)= 125°C 2 | mA re less Gate-body leakage | Vgg= +20 V +500) nA current (Vpg = 0) ON* Ves cn) Gate threshold Vos= Ves Ip= 2mA 2 aay, voltage Ros on) Static drain-source =| Vgg= 10 V Ip= 17.5 0.16] @ on resistance DYNAMIC Ms Forward Vos= 25 V Ip= 17.58 15 mho transconductance Cus Input capacitance 12000) pF Coss Output capacitance | Vog= 25 V f= 1 MHz 1500 | pF Crsg «Reverse transfer Ves= 0 1000} pF capacitance SWITCHING ty jon Turn-on time Vpp= 250 V 120 ns (dildt),, Turn-on current slope | R,= 50 0 100 Aus tayom Turn-off delay time 15 Hs ty Fall time 300 ns 218 <1 = ___________________ 7 $ES"THOMSON 416SGS35MA050D1 ELECTRICAL CHARACTERISTICS (Continued) Parameters Test Conditions Min. | Typ. | Max. | Unit ‘SOURCE DRAIN DIODE tgp Source-drain current 35 | A Isom Source-drain current 140 | A (pulsed) Vso Forward on voltage | Ign = 35A Ves= 0 2ftv (i Reverse recovery Isp= 35 A di/dt = 150A/us 600 ns time * Pulsed: Pulse duration < 300 ys, duty cycle <= 2% Safe operating areas Thermal impedance Derating curve Output characteristics Transfer characteristics. Transconductance ee 4 & MyM ot 4 8 git cf mp oe & FE &y7 S5S:THOMSON me : i 417SGS35MA050D1 Static drain-source on resistance Gate charge vs gate-source voltage 1 1 Normalized gate threshold voltage vs temperature Source-drain diode forward characteristics ‘ naaeaeael 1S veal) als 418 Normalized breakdown voltage vs temperature Capacitance variation ao Normalized on resistance vs temperature ‘= TRASGS35MA050D1 Test circuit for inductive load switching and diode reverse recovery times . a bs o 0s oot | Fast omoe a} Ce * 2 wa so Gate charge test circuit Vis20V2Veux ; 22008 tle Pw scones PW adjusted to obtain required Vig Diode reverse recovery time waveform 5/5 LORE 419