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  • Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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    anon_136451958
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    1. The 2SD5072 is a silicon NPN power transistor in a TO-3PML package intended for high-speed, high breakdown voltage applications like color TV horizontal output. 2. It has a collector current rating of 5A peak and 16A peak, with a collector power dissipation of 60W. The maximum junction temperature is 150°C. 3. Key electrical characteristics include a collector-emitter saturation voltage of 5V max at 4A collector current, a DC current gain of 8-3 typical, and a transition frequency of 3MHz.

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    1. The 2SD5072 is a silicon NPN power transistor in a TO-3PML package intended for high-speed, high breakdown voltage applications like color TV horizontal output. 2. It has a collector current rating of 5A peak and 16A peak, with a collector power dissipation of 60W. The maximum junction temperature is 150°C. 3. Key electrical characteristics include a collector-emitter saturation voltage of 5V max at 4A collector current, a DC current gain of 8-3 typical, and a transition frequency of 3MHz.

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    12 visualizzazioni3 pagine

    Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

    Caricato da

    anon_136451958
    1. The 2SD5072 is a silicon NPN power transistor in a TO-3PML package intended for high-speed, high breakdown voltage applications like color TV horizontal output. 2. It has a collector current rating of 5A peak and 16A peak, with a collector power dissipation of 60W. The maximum junction temperature is 150°C. 3. Key electrical characteristics include a collector-emitter saturation voltage of 5V max at 4A collector current, a DC current gain of 8-3 typical, and a transition frequency of 3MHz.

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    SavantIC Semiconductor

    Product Specification

    2SD5072

    Silicon NPN Power Transistors


    DESCRIPTION
    With TO-3PML package
    High speed
    High breakdown voltage
    Built-in damper diode
    APPLICATIONS
    Color TV horizontal output application
    PINNING
    PIN

    DESCRIPTION

    Base

    Collector

    Emitter

    Fig.1 simplified outline (TO-3PML) and symbol

    Absolute maximum ratings(Ta=25 )


    SYMBOL

    PARAMETER

    CONDITIONS

    VALUE

    UNIT

    VCBO

    Collector-base voltage

    Open emitter

    1500

    VCEO

    Collector-emitter voltage

    Open base

    800

    VEBO

    Emitter-base voltage

    Open collector

    IC

    Collector current

    ICM

    Collector current-peak

    16

    PC

    Collector power dissipation

    60

    Tj

    Junction temperature

    150

    Tstg

    Storage temperature

    -50~150

    TC=25

    SavantIC Semiconductor

    Product Specification

    2SD5072

    Silicon NPN Power Transistors


    CHARACTERISTICS
    Tj=25

    unless otherwise specified

    SYMBOL

    PARAMETER

    MAX

    UNIT

    VCEsat

    Collector-emitter saturation voltage

    IC=4 A;IB=0.8A

    5.0

    VBEsat

    Base-emitter saturation voltage

    IC=4 A;IB=0.8A

    1.5

    ICBO

    Collector cut-off current

    VCB=800V; IE=0

    10

    IEBO

    Emitter cut-off current

    VEB=4V; IC=0

    40

    200

    mA

    hFE

    DC current gain

    IC=1A ; VCE=5V

    fT

    Transition frequency

    IC=1A ; VCE=10V

    VF

    Diode forward voltage

    IF=5A

    2.0

    Fall time

    IC=4A;RL=50=;VCC=200V
    IB1=0.8A;IB2=-1.6A

    0.4

    tf

    CONDITIONS

    MIN

    TYP.

    MHz

    SavantIC Semiconductor

    Product Specification

    Silicon NPN Power Transistors


    PACKAGE OUTLINE

    Fig.2 Outline dimensions

    2SD5072

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