APM2055N

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 20V/12A, RDS(ON)=55mΩ(typ.) @ VGS=10V

RDS(ON)=75mΩ(typ.) @ VGS=4.5V
RDS(ON)=140mΩ(typ.) @ VGS=2.5V
• Super High Dense Cell Design 1 2 3
1 2 3

• High Power and Current Handling Capability G D S

G D S
• TO-252 and SOT-223 Packages
Top View of TO-252 Top View of SOT-223
D

Applications

• Switching Regulators
•
G
Switching Converters

S
Ordering and Marking Information
N-Channel MOSFET

A P M 2 055 N Package C ode

U : T O -2 5 2 V : S O T -2 2 3
H a n d lin g C o d e O p e ra tio n J u n c tio n T e m p . R a n g e
Tem p. R ange C : -5 5 to 1 5 0 ° C
H a n d lin g C o d e
Package C ode TR : Tape & R eel

AP M 2055N U : AP M 2055N XXXXX - D a te C o d e

XXXXX

AP M 2055N
AP M 2055N V : XXXXX - D a te C o d e
XXXXX

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 20
V
VGSS Gate-Source Voltage ±16
ID Maximum Drain Current – Continuous 12
A
IDM Maximum Drain Current – Pulsed 20
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

TO-252 50
T A=25°C
SOT-223 3
PD Maximum Power Dissipation W
TO-252 10
T A=100°C
SOT-223 1.2
TJ Maximum Junction Temperature 150 °C
T STG Storage Temperature Range -55 to 150 °C
R θjA Thermal Resistance – Junction to Ambient 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM2055N
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static
BVDSS Drain-Source Breakdown VGS =0V, ID=250µA
20 V
Voltage
IDSS Zero Gate Voltage Drain VDS =16V, VGS=0V
1 µA
Current
VGS(th) Gate Threshold Voltage VDS =VGS, ID =250µA 0.7 0.9 1.5 V
IGSS Gate Leakage Current VGS =±16V, VDS =0V ±100 nA
RDS(ON) Drain-Source On-state VGS =10V, ID=12A 55 70
Resistance VGS =4.5V, ID=6A 75 90 mΩ
VGS =2.5V, ID=2A 140 160
VSD Diode Forward Voltage IS=2A, VGS =0V 0.7 1.3 V
Dynamic
Qg Total Gate Charge VDS =15V, VGS=4.5V, 7 8.5
Qgs Gate-Source Charge ID=1.5A 2.5 nC
Qgd Gate-Drain Charge 1.5
td(ON) Turn-on Delay Time VDD=15V, ID=2A, 9.2 18.6
tr Turn-on Rise Time VGS =10V, RG=6Ω 14 27
ns
td(OFF) Turn-off Delay Time 31 58
tf Turn-off Fall Time 16 21

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Typical Characteristics

Output Characteristics Transfer Characteristics

20 20

VGS=4,5,6,7,8,9,10V
16 16

ID-Drain Current (A)

ID-Drain Current (A)

VGS=3V

12 12

8 8
TJ=125°C
4 VGS=2V 4 TJ=25°C TJ=-55°C

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

1.50 0.125
IDS=250uA
VGS(th)-Threshold Voltage (V)

RDS(ON)-On-Resistance (Ω)

1.25
0.100

VGS=4.5V
(Normalized)

1.00
0.075

0.75 VGS=10V

0.050
0.50

0.025
0.25

0.00 0.000
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20

Tj - Junction Temperature (°C) ID - Drain Current (A)

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.200 2.25
ID=5A VGS=4.5V
2.00 ID=5A

RDS(ON)-On-Resistance (Ω)
0.175
RDS(ON)-On-Resistance (Ω)

1.75
0.150

(Normalized)
1.50
0.125 1.25

0.100 1.00

0.75
0.075
0.50
0.050
0.25

0.025 0.00
0 1 2 3 4 5 6 7 8 -50 -25 0 25 50 75 100 125 150

VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

Gate Charge Capacitance

5 600
VDS=15V Frequency=1MHz
ID=1.5A
VGS-Gate-Source Voltage (V)

4 500
Capacitance (pF)

Ciss
400
3

300
2
200
Coss
1
100 Crss

0 0
0 1 2 3 4 5 6 7 8 0 5 10 15 20
QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage Single Pulse Power

20 250

10
200
IS-Source Current (A)

Power (W)
150

1 TJ=150°C TJ=25°C
100

50

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1E-3 0.01 0.1 1 10 100

VSD -Source-to-Drain Voltage (V) Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient

1
Duty Cycle=0.5
Thermal Impedance

D=0.2

D=0.1
D=0.05
0.1 D=0.02
D=0.01
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=50°C/W
3.T JM -T A =P DM Z thJA

0.01
1E-4 1E-3 0.01 0.1 1 10 100

Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Package Information

SOT-223( Reference JEDEC Registration SOT-223)

D A
a
B1 c

H E

L
K

e A1

e1

Dim Millimeters Inches

Min. Max. Min. Max.
A 1.50 1.80 0.06 0.07
A1 0.02 0.08
B 0.60 0.80 0.02 0.03
B1 2.90 3.10 0.11 0.12
c 0.28 0.32 0.01 0.01
D 6.30 6.70 0.25 0.26
E 3.30 3.70 0.13 0.15
e 2.3 BSC 0.09 BSC
e1 4.6 BSC 0.18 BSC
H 6.70 7.30 0.26 0.29
L 0.91 1.10 0.04 0.04
K 1.50 2.00 0.06 0.08
α 0° 10° 0° 10°
β 13° 13°

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Package Information (Cont.)

TO-252( Reference JEDEC Registration TO-252)

E A
b2 C1
L2

D
H

L1
L
b C
e1
A1

Mi ll im et er s Inc he s
Dim
Min . Ma x . Min . Ma x .
A 2. 1 8 2. 3 9 0. 0 86 0. 0 94
A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50
b 0. 5 08 0. 8 9 0. 0 20 0. 0 35
b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15
C 0. 4 6 0. 5 8 0. 0 18 0. 0 23
C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23
D 5. 3 34 6. 2 2 0. 2 10 0. 2 45
E 6. 3 5 6. 7 3 0. 2 50 0. 2 65
e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04
H 9. 3 98 10 . 41 0. 3 70 0. 4 10
L 0. 5 1 0. 0 20
L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40
L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80
Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw
Rev. A.1 - Feb., 2003
APM2055N

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

Reference JEDEC Standard J-STD-020A APRIL 1999
temperature

Peak temperature

183°C
Pre-heat temperature

Time
Classification Reflow Profiles

Convection or IR/ VPR

Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape
t

Po P D
E
P1

Bo
F
W

Ko
Ao D1

T2

C
A B

T1

Application A B C J T1 T2 W P E
330±1 62±1.5 12.75± 2 ± 0.6 12.4 +0.2 2± 0.2 12 ± 0.3 8 ± 0.1 1.75± 0.1
0.15
SOT-223 F D D1 Po P1 Ao Bo Ko t
5.5 ± 0.05 1.5+ 0.1 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 7.5± 0.1 2.1± 0.1 0.3±0.05
Application A B C J T1 T2 W P E
330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 16.4 + 0.3 2.5± 0.5 16+ 0.3 8 ± 0.1 1.75± 0.1
-0.2 - 0.1
TO-252 F D D1 Po P1 Ao Bo Ko t
7.5 ± 0.1 1.5 +0.1 1.5± 0.25 4.0 ± 0.1 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.1 - Feb., 2003
APM2055N

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOT- 223 12 9.3 2500
TO- 252 16 13.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 10 www.anpec.com.tw

Rev. A.1 - Feb., 2003