BUZ 103

SIPMOS Power Transistor

N channel
Enhancement mode
Avalanche-rated
dv/dt rated
Low on-resistance
175C operating temperature
also in TO-220 SMD available

Pin 1

Pin 2

Pin 3

Type

VDS

ID

RDS(on)

Package

Ordering Code

BUZ 103

50 V

40 A

0.04

TO-220 AB

C67078-S1352-A2

Maximum Ratings
Parameter

Symbol

Continuous drain current

ID

TC = 23 C

Values

Unit
A

40

IDpuls

Pulsed drain current

TC = 25 C

160

EAS

Avalanche energy, single pulse

mJ

ID = 40 A, VDD = 25 V, RGS = 25
L = 63 H, Tj = 25 C

100

Reverse diode dv/dt

dv/dt

kV/s

IS = 40 A, VDS = 40 V, diF/dt = 200 A/s

Tjmax = 175 C

Gate source voltage

VGS

Power dissipation

Ptot

TC = 25 C

20

V
W

120

Operating temperature

Tj

-55 ... + 175

Storage temperature

Tstg

-55 ... + 175

Thermal resistance, chip case

RthJC

1.25

Thermal resistance, chip to ambient

RthJA

75

DIN humidity category, DIN 40 040

K/W

IEC climatic category, DIN IEC 68-1

Semiconductor Group

55 / 175 / 56

07/96

BUZ 103

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Static Characteristics
Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID, Tj = -40 C

V
50

2.1

VDS = 50 V, VGS = 0 V, Tj = 25 C

0.1

VDS = 50 V, VGS = 0 V, Tj = -40 C

100

nA

VDS = 50 V, VGS = 0 V, Tj = 150 C

10

100

Gate threshold voltage

VGS(th)

VGS=VDS, ID = 1 mA
Zero gate voltage drain current

Gate-source leakage current

IDSS

IGSS

VGS = 20 V, VDS = 0 V
Drain-Source on-resistance

10

100

RDS(on)

VGS = 10 V, ID = 28 A

Semiconductor Group

nA

0.03

0.04

07/96

BUZ 103

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Dynamic Characteristics
Transconductance

gfs

VDS 2 * ID * RDS(on)max, ID = 28 A
Input capacitance

10

pF
-

900

1200

330

500

140

210

Crss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

18

Ciss

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

td(on)

ns

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time

20

30

70

105

150

200

95

130

tr

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time

td(off)

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time

tf

VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50

Semiconductor Group

07/96

BUZ 103

Electrical Characteristics, at Tj = 25C, unless otherwise specified

Parameter

Symbol

Values
min.

typ.

Unit
max.

Reverse Diode
Inverse diode continuous forward current IS
TC = 25 C
Inverse diode direct current,pulsed

160
V

1.2

1.8

trr

ns
-

60

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/s

Semiconductor Group

40

VR = 30 V, IF=lS, diF/dt = 100 A/s

Reverse recovery charge

VSD

VGS = 0 V, IF = 80 A
Reverse recovery time

ISM

TC = 25 C
Inverse diode forward voltage

C
-

0.08

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BUZ 103

Drain current
ID = (TC)
parameter: VGS 10 V

Power dissipation
Ptot = (TC)

45

130
W

110

Ptot

ID

100
90

35
30

80
25

70
60

20

50
15
40
10

30
20

10
0
0

0
20

40

60

80

100 120 140

180

20

40

60

80

100 120 140

TC

Safe operating area

ID = (VDS)
parameter: D = 0.01, TC = 25C

180

TC

Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T
10 1

10 3

K/W
A

ID

ZthJC

t = 11.0s
p

10 0

/ID

10 2

VD

100 s

)
on
S(
D
R

10 -1

1 ms

D = 0.50
0.20

10

0.10
10 ms

0.05

10 -2

0.02

10 0
0
10

10

V 10

10 -3
-7
10

VDS

Semiconductor Group

0.01

single pulse

DC

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

s 10

tp

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BUZ 103

Typ. output characteristics

ID = (VDS)

Typ. drain-source on-resistance

RDS (on) = (ID)
parameter: VGS

parameter: tp = 80 s
90

0.13

Ptot = 120W

l
k

A
a

4.0

4.5

5.0

h d

5.5

6.0

6.5

7.0

f h

7.5

70
i

60
50

40
e

30

8.0

9.0

0.06
0.05

4.0

0.04

20.0

0.03
0.02
0.01
0.00
0

3.0

0.07

2.0

0.08

10

1.0

0.09

0
0.0

RDS (on)
0.10

k 10.0

20

0.11

VGS [V]

ID

6.0

VGS [V] =
a
4.0
4.5
5.0

b
5.5

10

c
6.0

d
6.5

20

e
f
7.0 7.5

30

g
8.0

40

h
i
j
9.0 10.0 20.0

50

VDS

60

Typ. transfer characteristics ID = f (VGS)

Typ. forward transconductance gfs = f (ID)

parameter: tp = 80 s
VDS2 x ID x RDS(on)max

parameter: tp = 80 s,
VDS2 x ID x RDS(on)max

60

20

50

ID

75

ID

gfs

45

16
14

40
12

35
30

10

25

20
6
15
4
10
2

5
0
0

0
1

Semiconductor Group

V
VGS

10

10

20

30

40

60

ID

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BUZ 103

Gate threshold voltage

VGS (th) = (Tj)
parameter: VGS = VDS, ID = 1 mA

Drain-source on-resistance
RDS (on) = (Tj )
parameter: ID = 28 A, VGS = 10 V

4.6

0.11

98%

4.0
0.09
RDS (on)

VGS(th)

0.08

3.6
3.2

0.07

typ

2.8

0.06

2.4

98%
0.05

2%

2.0

typ

0.04

1.6

0.03

1.2

0.02

0.8

0.01

0.4

0.00
-60

0.0
-60

-20

20

60

100

180

-20

20

60

100

Tj

Typ. capacitances

180

Tj

Forward characteristics of reverse diode

IF = (VSD)
parameter: Tj , tp = 80 s

C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4

10 3

pF

IF

C
10 3

10 2

Ciss

Coss
Crss

10 2

10 1

Tj = 25 C typ
Tj = 175 C typ
Tj = 25 C (98%)
Tj = 175 C (98%)
10 1
0

10

Semiconductor Group

15

20

25

30

V
40
VDS

10 0
0.0

0.4

0.8

1.2

1.6

2.0

2.4

VSD

07/96

3.0

BUZ 103

Avalanche energy EAS = (Tj )

parameter: ID = 40 A, VDD = 25 V
RGS = 25 , L = 63 H

Typ. gate charge

VGS = (QGate)
parameter: ID puls = 60 A
16

110
mJ

EAS

90

VGS

80
70

12
0,2 VDS max

10

0,8 VDS max

60
8
50
6

40
30

20
2
10
0
20

0
40

60

80

100

120

140

180

Tj

10

15

20

25

30

35

nC

Q Gate

Drain-source breakdown voltage

V(BR)DSS = (Tj )

62
V
60

V(BR)DSS 59
58
57
56
55
54
53
52
51
50
49
48
47
-60

-20

20

60

100

180

Tj

Semiconductor Group

07/96

45

BUZ 103

Package Outlines
TO-220 AB
Dimension in mm

Semiconductor Group

07/96

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