P1203BV

N-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS

RDS(ON)

ID

30V

12m @VGS = 10V

11A

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

LIMITS

Drain-Source Voltage

SYMBOL
VDS

Gate-Source Voltage

VGS

20

Continuous Drain Current2

Pulsed Drain Current
Avalanche Current

http://www.DataSheet4U.net/

TA = 25 C

Avalanche Energy
Power Dissipation

TA = 100 C

L = 0.1mH
TA = 25 C

IDM

40

IAS

28

EAS

40

TJ, TSTG

11
A

mJ

2.5

PD

TA = 100 C

Operating Junction & Storage Temperature Range

30

ID

1,2

UNITS

1
-55 to 150

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

Junction-to-Case

RqJC

25

Junction-to-Ambient

RqJA

50

Pulse width limited by maximum junction temperature.

Limited only by maximum temperature allowed

Ver 1.0

UNITS
C / W

2012/4/13

datasheet pdf - http://www.DataSheet4U.net/

P1203BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)
PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS
MIN

TYP

MAX

1.8

UNIT

STATIC
V(BR)DSS

VGS = 0V, ID = 250mA

30

VGS(th)

VDS = VGS, ID = 250mA

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 20V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24V, VGS = 0V

VDS = 20V, VGS = 0V , TJ = 125 C

10

mA

On-State Drain Current1

ID(ON)

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State
Resistance1

VDS = 10V, VGS = 10V

RDS(ON)

Forward Transconductance1

gfs

70

VGS = 4.5V, ID = 11A

14

17.5

VGS = 10V, ID = 11A

8.5

12

VDS = 5V, ID = 10A

40

m
S

DYNAMIC
Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

846
VGS = 0V, VDS = 20V, f = 1MHz

pF

225
126

http://www.DataSheet4U.net/

Rg

Gate Resistance
Total Gate Charge

Qg

Gate-Source Charge
Gate-Drain Charge

VDS = 0.5V(BR)DSS,
ID = 8.8A, VGS = 10V

Qgs
Qgd

Turn-On Delay Time

tr

Turn-Off Delay Time2

td(off)

Fall Time2

1.65
17

nC

2.7
4

td(on)

Rise Time

VGS = 0V, VDS = 0V, f = 1MHz

9
VDD = 15V, ID = 12.5A, VGS = 10V,
RG=6

40

nS

20

tf

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C)

IS

Continuous Current
1

Forward Voltage
Reverse Recovery Time

VSD

Reverse Recovery Charge

Qrr

trr

IF = 25A, VGS = 0V
IF = 11 A, dlF/dt = 100A / mS

Pulse test : Pulse Width 300 msec, Duty Cycle 2.

Independent of operating temperature.

Ver 1.0

1.9

1.3

21

nS

10

nC

2012/4/13

datasheet pdf - http://www.DataSheet4U.net/

P1203BV
N-Channel Enhancement Mode MOSFET

http://www.DataSheet4U.net/

Ver 1.0

2012/4/13

datasheet pdf - http://www.DataSheet4U.net/

P1203BV
N-Channel Enhancement Mode MOSFET

http://www.DataSheet4U.net/

Ver 1.0

2012/4/13

datasheet pdf - http://www.DataSheet4U.net/

P1203BV
N-Channel Enhancement Mode MOSFET

http://www.DataSheet4U.net/

Ver 1.0

2012/4/13

datasheet pdf - http://www.DataSheet4U.net/