Introduction to

Etching and Back-end

Technology
BY
K.MANIKANTTA REDDY
14ECE2005
1

ETCHING
Removing unwanted parts of a layer from the wafer.

Highly selective

Perfectly anisotropic

Poorly selective

Isotropic

ETCHING
Etching
Wet Reactive
Dry
Isotropic
Anisotropic
Plasma
Ion
milling
Highion
Pressure
density
etching

Liftoff
Etching of materials used in VLSI
Etching induced damage and Cleaning

References:
Video lecture no.15, 17 : VLSI Technology by
Santhiram Kal.
Video lecture no.25, 26, 27, 28 : VLSI Technology by
Nanditadas Gupta
Chapter 11, Etching : Micro electronic fabrication by
Campbell
Chapter 9, Etching and Cleaning : VLSI fabrication
principles by Gandhi

METALLIZATION
Materials for contacts and interconnects
Different types of contacts : i. Schottky
ii. Implanted ohmic
iii. Alloyed
Metallization techniques : a. Evaporation
i. Filament
ii. Flash
iii. Electron beam
b. Sputtering
Metallization problems and failure mechanisms
Silicides and copper metallization

References:
Video lecture no. 34-38 : VLSI Technology by Santhiram Kal
Video lecture no. 30,31 : VLSI technology by Nanditadas Gupta

Chapter 15, Metallization : Microelectronic fabrication by Campb

Chapter 11, Device and circuit fabrication : VLSI fabrication princ

Chapter 8, Deposited films

by Gandhi

ISOLATION
Different types of Isolation methods : i. Junction Isolation
ii. Mesa Isolation
iii. Oxide Isolation
iv. LOCOS methods
v. Trench Isolation
Planarization or Chemical mechanical Polishing

References:
Video lecture no. 39,40 : VLSI Technology by Santhiram
Kal
Video lecture no. 32,33 : VLSI technology by Nanditadas
Gupta
Chapter 15, Device Isolation : Microelectronic fabrication
by Campbell
Chapter 11, Device and circuit fabrication : VLSI
fabrication principles
by Gandhi
Planarization : Wiki pedia

PACKAGING
References:
Video lecture no. 46,47 : VLSI technology by
Santhiram kal
Integrated circuit packaging : Wiki pedia

Thank You