ZTX458

Tamb=25C

1.2
1.0
0.8
0.6
0.4

0.01

0.1

ABSOLUTE MAXIMUM RATINGS.

0.6

0.1

10 20

IC - Collector Current (Amps)

VCE(sat) v IC

VCE(sat) v IC

VCE=10V

-55C
+25C
+100C
+175C

1.6

300

IC/IB=10

1.4

1.0

200

0.8
0.6

100

0.4
0.2

1.2
1.0
0.8
0.6
0.4
0.2

0.001

0.01

0.1

10 20

0.001

1.4

0.1

IC - Collector Current (Amps)

hFE v IC

VBE(sat) v IC

-55C
+25C
+100C
+175C

IC - Collector Current (Amps)

1.6

0.01

IC - Collector Current (Amps)

VCE=10V

1.2
1.0
0.8
0.6
0.4
0.2

10 20

Single Pulse Test at Tamb=25C

1.0

VBE - (Volts)

0.01

0.1

0.01

D.C.
1s
100ms
10ms
1.0ms
0.1ms

0
0.001

0.01

0.1

10 20

0.001
1

10

100

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-183

E-Line
TO92 Compatible

0.8

IC - Collector Current (Amps)

1.2

1.0

0
0.001

10 20

VBE(sat) - (Volts)

hFE - Normalised Gain

1.4

C
B

1.2

0.2

+100C
+25C
-55C

1.6

1.4

IC/IB=10

0.4

0.2
0
0.001

-55C
+25C
+100C
+175C

1.6

VCE(sat) - (Volts)

VCE(sat) - (Volts)

1.4

IC/IB=10
IC/IB=20
IC/IB=50

ZTX458

ISSUE 2 MARCH 1994

FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt

TYPICAL CHARACTERISTICS

1.6

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

400

Collector-Emitter Voltage

VCEO

400

Emitter-Base Voltage

VEBO

300

mA

Continuous Collector Current

IC

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).

TYP.

MAX.

-55 to +200

PARAMETER

SYMBOL

MIN.

UNIT

CONDITIONS.

Collector-Base
Breakdown Voltage

V(BR)CBO

400

IC=100 A

Collector-Emitter
Breakdown Voltage

VCEO(sus)

400

IC=10mA*

Emitter-Base
Breakdown Voltage

V(BR)EBO

IE=100 A

Collector Cut-Off
Current

ICBO

100

nA

VCB=320V

Collector Cut-Off
Current

ICES

100

nA

VCE=320V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Collector-Emitter
Saturation Voltage

VCE(sat)

0.2
0.5

V
V

IC=20mA, IB=2mA
IC=50mA, IB=6mA

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

IC=50mA, IB=5mA

Base-Emitter
Turn On Voltage

VBE(on)

0.9

IC=50mA, VCE=10V

Static Forward Current

Transfer Ratio

hFE

100
100
15

Transition Frequency

fT

50

Collector-Base
Breakdown Voltage

Cobo

IC=1mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V*

300
MHz

IC=10mA, VCE=20V
f=20MHz

pF

VCB=20V, f=1MHz

1000

3-182

ZTX458

Tamb=25C

1.2
1.0
0.8
0.6
0.4

0.01

0.1

ABSOLUTE MAXIMUM RATINGS.

0.6

0.1

10 20

IC - Collector Current (Amps)

VCE(sat) v IC

VCE(sat) v IC

VCE=10V

-55C
+25C
+100C
+175C

1.6

300

IC/IB=10

1.4

1.0

200

0.8
0.6

100

0.4
0.2

1.2
1.0
0.8
0.6
0.4
0.2

0.001

0.01

0.1

10 20

0.001

1.4

0.1

IC - Collector Current (Amps)

hFE v IC

VBE(sat) v IC

-55C
+25C
+100C
+175C

IC - Collector Current (Amps)

1.6

0.01

IC - Collector Current (Amps)

VCE=10V

1.2
1.0
0.8
0.6
0.4
0.2

10 20

Single Pulse Test at Tamb=25C

1.0

VBE - (Volts)

0.01

0.1

0.01

D.C.
1s
100ms
10ms
1.0ms
0.1ms

0
0.001

0.01

0.1

10 20

0.001
1

10

100

IC - Collector Current (Amps)

VCE - Collector Voltage (Volts)

VBE(on) v IC

Safe Operating Area

3-183

E-Line
TO92 Compatible

0.8

IC - Collector Current (Amps)

1.2

1.0

0
0.001

10 20

VBE(sat) - (Volts)

hFE - Normalised Gain

1.4

C
B

1.2

0.2

+100C
+25C
-55C

1.6

1.4

IC/IB=10

0.4

0.2
0
0.001

-55C
+25C
+100C
+175C

1.6

VCE(sat) - (Volts)

VCE(sat) - (Volts)

1.4

IC/IB=10
IC/IB=20
IC/IB=50

ZTX458

ISSUE 2 MARCH 1994

FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt

TYPICAL CHARACTERISTICS

1.6

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

400

Collector-Emitter Voltage

VCEO

400

Emitter-Base Voltage

VEBO

300

mA

Continuous Collector Current

IC

Power Dissipation at Tamb=25C

Ptot

Operating and Storage Temperature Range

Tj:Tstg

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).

TYP.

MAX.

-55 to +200

PARAMETER

SYMBOL

MIN.

UNIT

CONDITIONS.

Collector-Base
Breakdown Voltage

V(BR)CBO

400

IC=100 A

Collector-Emitter
Breakdown Voltage

VCEO(sus)

400

IC=10mA*

Emitter-Base
Breakdown Voltage

V(BR)EBO

IE=100 A

Collector Cut-Off
Current

ICBO

100

nA

VCB=320V

Collector Cut-Off
Current

ICES

100

nA

VCE=320V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Collector-Emitter
Saturation Voltage

VCE(sat)

0.2
0.5

V
V

IC=20mA, IB=2mA
IC=50mA, IB=6mA

Base-Emitter
Saturation Voltage

VBE(sat)

0.9

IC=50mA, IB=5mA

Base-Emitter
Turn On Voltage

VBE(on)

0.9

IC=50mA, VCE=10V

Static Forward Current

Transfer Ratio

hFE

100
100
15

Transition Frequency

fT

50

Collector-Base
Breakdown Voltage

Cobo

IC=1mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V*

300
MHz

IC=10mA, VCE=20V
f=20MHz

pF

VCB=20V, f=1MHz

1000

3-182