Georgia Institute of Technology School of Electrical and Computer Engineering EE 3040C: Microclectronics Midterm Exam I NOTE: Please show all your work to obtain partial credit. The exam is closed book and notes. You may use one handwritten sheet of formulas. NAME Solvtien Grade:Problem 1 (2U points) a (8) a Find the miller indices of the plane shown below: Poiats of Intersechian With Cosrdinck axes (44, 24,44) yy a > (bth amen 2 [(ak=2 0 A (8) _b. A material is composed of two types of atoms A and B. Atom A has an effective radius of 2.2 A° and atom B bas an effective radius of 1.8 A°. The lattice is body- centered cubic (bec) as shown below with A atoms at the corners of the cube and B atoms at the center. Assuming the atoms are like hard spheres which are packed ‘as closely as possible (some spheres touching). Find the lattice constant a. there ave twa prssihle cases For aliens Cortechas: Cae N ates in Contact ay B=2Hg =464 AP A Casez! A and B In Contact; NBL, O='a+Gq= 0 A° Pade “oz a0 Ba Cose 4 results in a molt cAasely, a sinclures A => A atoms ove torching anh a-4-4 Ae \ ()c._ Find the number density of atoms A and B (j.., number of atoms A and B per unit volume) for the material in part b. There ave one A dtm and ore B atom In each Unit Cell pride volume a There fore, tie Number lensities for A and B atoms aves . Number density of in Number density of $2 — 1, sito, 3 2 hy ae =avroblem 2 (30 potntsy ‘The equilibrium energy band diagram for a 1 em long bar of Si with cross sectional area of 2000 (um)? at equilibrium at room temperature (I = 300 K) is shown below. When a V = 10V voltage is applied tothe sample, the current is measured at 1= 0.1 mA. Assuming that for Si at room ‘temperature, n; = 10"° em, 11> 1350 em?/(V.sec), and 1-460 em’/(V.sec): (5) a Is this sample n-type or p-type? Why? Ee rec & [n-type | (25) _b. Assuming that (F,-F,) in the energy band diagram is large enough to make the material extrinsic and that the sample is doped with only one type of dopant, find the doping concentration. Is the dopant donor or acceptor? iat ERT See ¥e ue re bet =bSaTs0s a V Came TA” Soexlety ite) PNA Ay HM x Gxt 13802 OF [voz 2.3x105 em? donors (5) _¢.Find the concentration of majority and minority carers WN ps 2-3 ¥le Sno 3 0= No An= pe4.3sxlot cm? (5) d. Find the location of Fermi level (Ep) relative to Ej (.e., Er-E)). 0.026 (ev) vn (228 of : ia 2443Sule om? ©)Problem 3 (25 pomts) A Si sample is doped such that at equilibrium the electron concentration is given by n(x) =nexp[12 (1-2x/L)"] for-L Ewe (24) 3) U- ae) 4B RUSE yn H nowene BO 2S ig Ee -EOMeT = Ep-Bl= Va leq U- wey a Ey-Ee=- liz er De Ep is covstantand Ec Eer eer have temitae Gaia ner with xX. Ak vel Ez gets to the maximum Ecotp- cn eae Eo asProblem 4 (20 pots) In the circuit shown below, find the transfer function v,(s)/v.(). Kel at Node O; uy 4t2=ls i y= voo's ,i3= a » ECS (No~Vg) one 2 Wo- Vs) en CS) = Vo U4tecs=Vs Gate awe)Extra credit Problem (5 points) For a nondegenerate semiconductor with intrinsic concentration nj and donor concentration Np with Np >> ni, we know that the electron concentration is n = Np. This approximation is valid in a wide temperature range until n; becomes comparable to Np. In other words, for a wide temperature range, the electron concentration (n) is independent of temperature, On the other hand, we derived the following formula for nm class, which had temperature I 1n several places suggesting that n might strongly depend on temperature: mat RTI 3p ~(Ec-EP), 4 E56, n=2 ele inf THe (Kr fatap >" 2 b yank (Ep-5, e Met How do you explain this apparent discrepancy?