Georgia Institute of Technology School of Electrical and Computer Engineering EE 3040B: Microelectronics Final Exam ‘NOTE: Please show all your work to obtain partial credit. The exam is closed book and notes. ‘You may use four handwritten sheets of formulas. NAME. Solu tions Grade:> ae Part 1 (30 points): In problems 1-10 circle the best answer to each problem. Each problem L has 3 points. There is no penalty for incorrect answers. No partial credit is given. 1, What are the miller indices of the plane shown below? Assume that the lattice is cubic. a.(121) b.212) 6.221) @» v 2. Al and Ga are both group II elements, and As and Sb are both group V elements. Which one of the following represents a quaternary IIJ-V semiconductor material? a. Alp2s Gay 30 Aso30 Sbo.s (PpersGans Asis Sto AlGaAs Sb, d.a,b,ande 3. The energy band diagram of a semiconductor material is shown below. Using this figure, which one of the following statements is correct? ee ‘otal current is zero everywhere (at all x). TT Ee ‘An externally applied electric field exists. G oe L ¢. The material is uniformly doped with donors. € vy, d. Alll of the above Ne, 4, The excess hole concentration at the junction boundary on the n-side of a pn junction is 1/10 times the equilibrium hole concentration in the n-side (Ap,(x=0) = 0.1 pyo in the figure below). Assuming the junction to be at room temperature (T= 300 K), what is the bias voltage, Vq? Vs 2.0.025V b.0.6V —¢. 0.0025 6v ie. 5. Which one of the following statements about Fermi level (Er) is correct? a. The probability of finding an electron at energy Ey is always 50%. b. The probability of a state at energy E;= Ep 2 AE being full is twice the probability of a state Ep- AE being full probability of a state at energy E,= E+ AE being full is equal to the probability of a state ‘WE, = Er + A being empty. 4. The location of Ey in a semiconductor material is approximately the middle of the bandgap.U 6. In designing a two-stage BJT amplifier shown below, we want to have a relatively large voltage gain, a moderate input resistance and a small output resistance. What combination of the stages is the appropriate choice? ICE for stage 1 and CC for stage 2 Ne fer . CE for both stages “stage! Staged "V5 ©. CE for stage I and CB for stage 2 a S 4. CC for stage 1 and CB for stage 2 7, Which scattering mechanism is the dominant source for mobility limitations in a MOSFET at room temperature? Impurity scattering b, Lattice scattering ‘Surface scattering . All three mechanisms have comparable strengths 8. An Ip-Vp characteristic derived from an ideal MOSFET is pictured in the figure below. Given a turn-on voltage of Vr= I V, what is the gate voltage one must apply to the MOSFET gate to obtain the pictured characteristics: aVor4V b.Vo=9V Ove-6v 4. Ve=11V to ‘9. What is the input resistance (Ri) of the amplifier shown below? alkQ (Q2xa ©.4KQ dco 2K 2ka LoVe WY HA seal of- Ame mR!10. What is the nominal output voltage at the low state (Vo.) in the following MOS inverter? Assume that R = 100 KQ, Ka =5 HAV”, and Vin = 1. aVor025V b Va=05V ©. Vou =1V jone of the above Nope VPart II (70 points): Solve the following problems. Show all your work to obtain partial credit. Problem 1 (10 points) The resistance of a 1 cm long bar of n-type Si with cross sectional area of 2000 (jim)? at equilibrium at room temperature (T = 300 K) is = 100 KQ. Assuming that for Si at room temperature, n, = 10" cm®, jg 1350 cm?/(V.sec), and p=460 cm?/(V.sec): 3) _ a. Find the concentration of donors (Np). Is 4 \ = 23xl0 Se ae. Np = RAPA — \Salebgta 135042410 ef -fL R nqPnA No qteA 7 (2) __b. Find the location of Fermi level (Er) relative to Ej and draw the energy band diagram. Ss ————£e Ep-Ej =k In ND ~ 0.0254 Inasue) __ [er-=. =oazes) anaes _ GU (3) ¢. The sample is then uniformly illuminated with light. As a result, the resistance of the bar at steady state is reduced to R = 10 KQ. Find the excess hole concentrations (Ap,) due to the light illumination, Ref Re Lk Bi LVe 2 120 clo stele, wa ? GA nee = a = 10 213500 4 [(rran) Mn NP Mp =104 Mp Ha 2 13S (Np php) Hse Paton %’ 3 > {Rlo AP =I2I50 Np > AReOn =6.7Wp =)-S4¥lo Om [e=pn 2h Saxon? \ (2). Does low-level injection apply to this problem? Why? [Nd, Since BPSyNpeNoU Problem 2 (13 points) A dimensioned energy band diagram for an ideal MOS-C operated at T = 300 K (n= 10"° cm) with Vq #0 is shown below. Using this figure: (4) a. Determine gr and gs. - - (Serface\ Er (he §e |Npo= IS cen 2) ¢, Determine Vo. No=be7¥le Noe 5 [eps -EFm| =-0-b6 => Ne =0-60 (2) Determine the oxide thickness x,, Use Ks= 11.8 and K,=3.9, ————. -7 NG = =h,- is 5 JEAN &,) %ozy ~0° be 0.3-3xle Xe =>%o =lom eugs sodpm (3) __€. Sketch the block charge diagram corresponding to the state pictured in the energy band diagram. What is the state of the MOS-C (accumulation, depletion, or inversion)? [acrieton} Since Lerten seProblem 3 (10 points) (Cy __ Find and plot the transfer characteristics (v, versus v;) for the following circuit. Assume both diodes are ideal. Geser, D, om, D2 OFF — ae Re BV Test: Ip. We! yoe Wl? av suzey) Vv, 7 ko 7H Eyer Vi>~ Dp 2-10 -Vo So Cuse3: p, off, Dz ON No= 2¥-2 Vo stop WtlOyiz Vr sVo-122 EM "2.120 vate doe Vy <0) Test: Ipraa- +45 U a auc 23v alee] Cuse ys both oN: ImPassile Since we alveady covered all vy,Extra work on Problem 3 UProblem 4 (7 points) is Using Ebers-Moll model, derive the I-V, relationship for the device shown below. sf Tt + A E, - Capt hee eee tery = Mec, Type Teale he 5) Vee=Va. , T= Tr—tele- =o = Le-dele co => Ip-de Tp U Wher ) 7 TaTe-dpde Te = W-aede) Te (e = _ Ma, T= Tp, (I-dpdg) (eProblem 5 (14 points) O forthe mosrET amplifier circuits shown below, find: (5) a. DC equivalent circuit and Q point (Ips and Vps). (3) b. AC equivalent circuit, amplifier configuration (CS, CG or CD), and small signal model parameters. 2) ¢. Voltage gain (vdv,) (2) d. Input resistance R; as specified in the circuit (2) ¢. Output resistance R, as specified in the circuit For the MOSFET, assume that Vrp=-1 V, and K, = 0.4 mA/V?, and 2. = 0. Other parameters are Ry = 2.2 MQ, Ry = 2.2 MO, Ry = 22 KQ, Ry = 18 KQ, and Vpn = 18 V. ade equivalent circuit “laa Oke Uk H > Wisp ha R, [ger een ss r * a te mT Veg = BB a4 Ree elieoehlan | " irk = = AMSG KvL in loop ©, -18 +2? 0 4¥SG +420 Tp= 1S y= LSE Tsp= ke Wseavrry 20-2 Ws = EE Vog-= 2.24 V >-Y7P aceph kG 7 Vs6— 1. TIV5G — 0520 So yeg = 0.4 VL Tp Reject 24 > Tepe 4 2:24 20.3) MA| evi in loop vo =1B-L22+!8)%03) mafic ee Note: Vgp SVs +¥Tp=h24VExtra work on Problem 5 U by pe equivalent circu Rh —., = RL Vo Veni - Waste 2173 rN. 4Bz R Roy Re= eRe = LMS, @c= Fes N&p = wR. Vth = Meey, = o9AVs, Raye RsllRG = O-44ES WwW Small > ignal model Pavameters : - VSD 200+ Am = 2 Isp 22403) cos mA AG 2 AB eee " Vser%p | hay Uy Ave No. Neo, Vil. Gm 8) (0-49) =~ 356 Vs vs Vin Av +56) 3) Rinzco 2c Pin I RE=PG €) Rot=¥o2 20 Roz Root I Rp Te= 213 Lpas3mA > Ica Pr Te Zo.0S3mA 242x200 fen) KVL an » lap@: Vee 4 Re Te+ Vee -VQE=o sp C= 22-F-Zoovaos 3 vee -ie- ce-wAV] [Te [sex 0. osama |. o3. mB ye Pe 7.33 kS\200- Small Ségaad modek J, = hh. oat 2205 tn 1.33 ES by Re c) ler VgsVerMea <0 V3 R F. [Bem=sl 7 Bi ZBee a Nas fe Ee a a YD wy Vas (Ree BE i Veoh Yelp,Problem 7 (6 points) ie Find the logic function (Y) implemented by the following NMOS logic circuit. 450 @ (“ce 1 = D e & U To _—— VY: Ace-+ Ac pt + DE+8F