ECE 3040 Fall 2014 Exam #1 Name: \ eee —“ y) 1) [4 pts]What is the name of the crystal structure silicon forms? How many nearest neighbors do silicon atoms have within the crystal? —climand we UF 2). [4 pts] What is the wafer crystal orientation of preference today in CMOS fabrication and why? ~ (ldo) — less olensiiy df oon AS leas oleferd 3), [4 pts] For semiconductor material to be non-degenerate; what must be true for E,? le-&] =3k7 4) {4 pts] What are the concentrations of electrons and holes for intrinsic silicon at room. N=p=anic 10 e temperature? 5) [4 pts] For an n-type semiconductor, does |E;£\| increase, decrease, or remain the same with increasing temperature? Explain what does this mean in terms of carriers, — feltr lie ake Cor 7 (oe Wunfper bere ERE © 8 ' Gx dfs = apts6) [4 pts] The Einstein relations discussed in class, what do they relate? In other words, how are they useful? = eld clnft oul Affede 7) [4 pts] Under forward bias, why does a linear increase in voltage cause an exponential increase in current? — Cuvier CrCertidin, vey Cxponrermd DS ONE PMrogresses uy Gum berol otypn = Myre d& Gyties oe Or ert, ut . 28 oy fo Suma , Pl we 8) For the given energy band diagram, answer the following questions (be sure to label the x-axis {as shown in the figure below): {a) [3 pts} Do equilibrium conditions prevail? How do you know? BE — Fut & (b) [3 pts] Sketch the electrostatic potential (V) inside the semiconductor as a function of x. Vv Eves 4 ayapks = thels.{c) [3 pts] Sketch the electric field (8) inside the semiconductor as a function of x. / oe (d) [6 pts] The carrier pictured on the diagram moves back and forth between x = O and x=L without changing its total energy. Sketch the K.E. and P.E. of the carrier as a function of position inside the semiconductor. Let E; be the energy reference level, a * | | (e) [6 pts] Roughly sketch n and p versus x. \ 2 ergs 4 axbyts ispt8) Asilicon pn step-junction is doped with Ny=10"* and Ns=4x10". Calculate a) [5 pts) built-in potential mie |e = 0.026 In Yale ae Vise = +f In f- SO a SHG ) [5 pts} depletion-layer width > Gv/*™ a bts] depletion ayer wet 3 aks Ny 4% iV We Xntxp = Z “AN & DS od FA YM Xn s— Ky >>KP Se sce Ny > Nu ¢) [8 pts} Calculate and sketch E; relative to waneuetion band*far away from the junction* for only the n-side. pee CMT 2 te gl nt Ef-Gi= 0-357 evuw Y 10) [15 pts) A silicon pn junction diode has the following parameters: Ny=10®, N,=5x10™, x,=1,=1 us, A=0.01 cm?. What is the applied voltage if the forward current is 1 mA at 300K. Assume j4;=500 cm?/Vs and 14,=200 cm*/Vs. WVa | kr = Ar ADE -I ss Lee + | ein k ds Dn= My = 0.036 (6%) = 13 cm/s Ew wa g ple Pee Bay = 0-0 (aide 5:0 ants 0 Be “p= vopy" = 2.3 x0 0m Lys (p= 3 Saw Fem : fe y Ze - 1a 6 en-3 Dabure ne 10° Ie Palle Na No y= Det x0 on? /0 aS Jos FX oe Ga) =O N5051 4) Wess = intl. a11) Below are some questions relating to cartier concentration and resistivity: ‘a, Assuming the following: n.=10" cm, No=7x10™ cm, Nx=2x10" cm,p,=1600em?/Vs and u,=480 cm?/Vs, what are the electron and hole concentrations under equilibrium ? -M, No-Na . d 7 n= Note + | Gowh, Ni* = S2y/pr cmd Ae ~3 + (Cx ye ars 1,93 x19! On a - yt Of pe = 1,93 x10 b. P-type silicon has resistivity of 0.5 ohm-em. Assuming jin=1450cm?/Vs and p=500 em'/Vs i. [8 pts] find the electron and hole concentrations 2 i Poy, i e lb rye 3 > a5x10° Ch fx gust a Na d 3 ~ Dine Pee texto cm P-type =a Na 3 a ieee £4 8G.oe ii [8 ptslthne maximum change in resistivity coused by a fash of ight, if the ight creates 2x10" additional electron-hole pairs , Plots lip = Qc10!%, cut Chet ~hole Pony th é CS i % j ib Om 3 yaa = aes xio’ a fez At = Gasxio’’ Cm fo ) Now, Mp = ux” Ap = My aC aan) x anso’é | iz ° Thus, we must Now Beco dr nA m™ fe Min tng fin fie ! ot SP ABAMPLY Mat = Peay (Pen)! > P= feape-[SL = 4)aNQ-on 2 AP 2025-919 = 038 L- Some useful constants: q=1.6x10"* coul k-8.617 x10" eV/K k,=11.7 for silicon ,°8.85X10™ frad/em KT/q=0.0259 V @T=300K is BRS :