ECE 3040 Fall 2014 Po | WA :
vane_~O [04104
Exam #2
1) [4 pts] In a BIT, is the collector, base, or emitter the most doped region? Why?
— Emitte-
— emnlh- ebbing
2) {4 pts] in a BJT, fundamentally, why does the base region need to be ‘narrow’? Moreover, define
what ‘narrow’ means (hint: you may wish to use mathematical expression to explain)
oe Mipns2e mronlig Corner Pe Cembortion
eo << (BP
3) [4 pts] For a BIT to be in the forward active mode, how should the two junctions be biased (be
sure to specify the junction in your answer)?
E-8 = fwd
B-C = Revest
4) {@ pts] For a MOS-capacitor under inversion, does the surface potential in the channel change
quickly, slowly, or remain the same as the gate voltage increases? k
— Slowly
Caen
5) [4 pts] For a MOSFET, the current flowing in the channel is dominated by diffusion, drift, or
anit6) [4 pts] In the Square Law Theory derivation in class, what helped us find an analytical expression
for the charge formed in the channel region relative to surface potential? You can explain in
short words or write key equations.
os We GA Cd5ehey Now Q=CV Lo
G be Qn Bw gee WMepe
7) [4 pts] Why is the effective carrier mobility used in MOSFET modeling different from the bulk
carrier mobility?
— Bie clves not toke me Betoert bagee :
Tderpetuns @ be Swbec — Suaiice SO
Identify the region of the operation of an NMOS transistor with K,, = 400 44/V2and
Vay = 0.7¥ for:
a) [4 pts] ) Ves = 3.3V and Vos = 3.3V,
Va-Yna Vos SS Sat
3]
b) [4 pts] (b} Ves = OV and Vps = 3.3V,
\bs< Vin —> off
€) [4 pts] (c) Ves = 2V and Vos = 2V,
Varvia Vas —® Set
4) [4 pts] Ves = 1.5V and Vos = 0.5V
Veg Vm >Vos > hina9) The following figure is a dimensioned energy band diagram for an ideal MOS-C operated at T=
300K with Vg # 0. Note the Ep = B; at the Si-SiO; interface.
(a) {5 pts} Calculate bs
G 7 [E.G ~6 OO N= On3V
(b) [4 pts] Draw the block charge diagram corresponding to the state pictured in the energy band
diagram,(c) [5 pts] What is the value of Vg based on the band diagram
Ve=y [Albee - g-toms)|
= 046
(d) [12 pts] What is x, (oxide thickness) equal to based on the band diagram.
Va = Bet ‘se [Fie :
oO Ds iid ka %
ss y = kt Ni
ae z a. (wt)
10 0-3/p.02d
BNA ee oA) _ Ip €
I
oF3 x0 Jon
*Asseme yy = Oks
10) [10 pts] Find the Q-point for the two diodes shown in the circuit below:
22KQ
Assum Pi o® ot Ba_OM
Tr OBKY 06S nak
ty) i
we G qv
446-0065
$= ape = OaamA
sole @ Nace k= 6V— (ask) xaW= -B 44
Gi! (0A, 34V)
ever (0-380, Ob §¥\11) (10 pts) Find the Q-point for the circuit shown below. Assume the Bp = 50 and Vag = 0.77
+10V
68 KQ 43 KQ
36KQ. 33KQ Re, = RAMEBEN
a
= ORSYAR
g3k* 36K /
ae m Vea = aera)
=> 6? sia GJlov = 3 Ufav
Veg—a eee
3.460 -02%
ce =56 = héaah
eet (5041) BRL
fesi & RD sone Fel Es
Sc=pig= S290 B= (Gili )= 8265 aA
e
¥ [o~ 43k he BREE ~ 32 79V
ce =
Gime = (stn 230)12) [10 pts] The ac equivalent circuit for an amplifier is shown below. Assume the capacitors have
infinite value, Ry = 10 KM, Ry = 5 MO, Rc = 1.5 MN and Ry = 3.3 MM. Calculate the voltage
gain for the amplifier if the BJT Q-pointis (1 j1A, 1.5 V). Assume the iy = 40 and V4 = SOV.
pikee “9
dons
Voot
ee Tian
8, YY 50M
fy = a, 4 nage %
= jms
= Yous
Mp 333 KIL
wp Ra Rola= 8%
= yp = 7 Ine (nifrellRs )
Mn
Nbe = - Fer) (Re >)
<> Vet = “Sm
Vee
den = Vin = 7.
CB (ult) Vin
Ty, (olIhe/I oss = = 44This Page left empty in case you need extra paper