2N7002

SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET

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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is a
N-Channel Field Effect Transistor, manufactured by the
N-Channel DMOS Process, designed for high speed
pulsed amplifier and driver applications.
MARKING CODE: 702

SOT-23 CASE
MAXIMUM RATINGS: (TA=25C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current (TC=25C)
Continuous Drain Current (TC=100C)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IGSSF
IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS

SYMBOL
VDS
VDG
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
JA

60
60
40
115
75
115
800
800
350
-65 to +150
357

CHARACTERISTICS: (TA=25C unless otherwise noted)

TEST CONDITIONS
MIN
TYP
VGS=20V
VGS=20V
VDS=60V, VGS=0
VDS=60V, VGS=0, TA=125C
VDS=10V, VGS=10V
ID=10A

500
60

105

VDS=VGS, ID=250A
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=11.5mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TA=100C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, TA=100C
VDS=10V, ID=200mA

1.0

2.1

3.7
6.2
80

MAX
100
100
1.0
500

UNITS
V
V
V
mA
mA
mA
mA
mA
mW
C
C/W

UNITS
nA
nA
A
A
mA
V

2.5
3.75
0.375
1.5
7.5
13.5
7.5
13.5

V
V
V
V

mS

R5 (31-January 2011)

2N7002
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET

ELECTRICAL
SYMBOL
Crss
Ciss
Coss
ton
toff

CHARACTERISTICS - Continued: (TA=25C unless otherwise noted)

TEST CONDITIONS
MAX
UNITS
VDS=25V, VGS=0, f=1.0MHz
5.0
pF
VDS=25V, VGS=0, f=1.0MHz
50
pF
VDS=25V, VGS=0, f=1.0MHz
25
pF
VDD=30V, ID=200mA, RG=25, RL=150
20
ns
VDD=30V, ID=200mA, RG=25, RL=150
20
ns

SOT-23 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 702

R5 (31-January 2011)
w w w. c e n t r a l s e m i . c o m