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Transistors
Drain current
Reverse drain
current
4.0+0.5
0.3
2.5+0.2
0.1
1.00.3
Symbol
Limits
Unit
VDSS
60
V
V
VGSS
20
Continuous
ID
Pulsed
IDP1
Continuous
IDR
Pulsed
IDRP1
C
C
PD
Channel temperature
Tch
8
0.5
22
150
Storage temperature
Tstg
55+150
Gate
Protection
Diode
Min.
Typ.
Max.
Unit
10
V(BR)DSS
60
ID = 1mA, VGS = 0V
IDSS
10
VGS(th)
0.8
1.5
RDS(on)
0.25
0.32
ID = 1A, VGS = 4V
RDS(on)
0.35
0.45
Yfs
1.5
Input capacitance
Ciss
160
pF
VDS = 10V
Output capacitance
Coss
85
pF
VGS = 0V
Crss
25
pF
f = 1MHz
td(on)
20
ns
ID = 1A, VDD
tr
50
ns
VGS = 4V
td(off)
120
ns
RL = 30
tf
70
ns
RG = 10
Rise time
Turn-off delay time
Fall time
Source
IGSS
(1) Gate
(2) Drain
(3) Source
Abbreviated symbol : KE
Symbol
0.4+0.1
0.05
0.40.1
1.50.1
Gate
(3)
0.50.1
Drain
Gate-source leakage
(2)
Gate-source voltage
0.40.1
1.50.1
3.00.2
ROHM : MPT3
E I A J : SC-62
Drain-source voltage
1.50.1
1.60.1
(1)
!Structure
Silicon N-channel
MOS FET transistor
Parameter
4.5+0.2
0.1
0.50.1
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
Test Conditions
VGS = 20V, VDS = 0V
30V
2SK3065
Transistors
!Packaging specifications
Package
Type
Taping
Code
T100
1000
2SK3065
Pw=10ms
0.1
DC OPERATION
0.01
2V
1
Ta=25C
Single Pulsed
25
50
75
100
125
150
0.001
0.1
175
VDS=10V
Pulsed
Ta=25C
25C
75C
125C
0.1
0
0
0
100
Fig.3
2
10mA
1
ID=1mA
0
50 25
25
50
75
100
125
Fig.5
150
10
10
VDS=10V
5
DRAIN-SOURCE VOLTAGE : VDS(V)
10
10
Fig.1
VGS=1.5V
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()
0
0
Ta=25C
Pulsed
4V
3.5V
3V
2.5V
1ms
100s
Operating in this
area is limited by
RDS(on)
VGS=4V
Pulsed
Ta=125C
75C
25C
25C
0.1
0.01
0.1
10
2SK3065
Transistors
Ta=125C
75C
25C
25C
0.1
2A
0.5
ID=1A
0.25
0
0
10
Ta=25C
25C
125C
75C
0.1
0.4
Fig.11
0.8
1.2
Ciss
100
Coss
Crss
10
100
VDD 30V
VGS=4V
RG=10
Ta=25C
Pulsed
td(off)
100
tf
tr
10
0.1
Fig.13
10
Fig.14
50
75
100
125
150
4V
1
VGS=0V
0.1
0.4
0.8
1.2
1.6
td(on)
1
0
25
Ta=25C
Pulsed
0.01
0
1.6
Fig.12
1000
CAPACITANCE : C(pF)
Ta=125C
75C
25C
25C
0.1
10
VGS=0V
f=1MHZ
Ta=25C
10
Fig.9
VGS=4V
Pulsed
0.01
0
10
1000
ID=1A
Fig.10
2A
0
50 25
20
10
VDS=10V
Pulsed
0.1
0.01
Fig.8
10
15
VGS=4V
Pulsed
0.5
Fig.7
10
0.1
0.01
0.75
Switching Characteristics
1000
REVERSE RECOVERY TIME : trr(ns)
Ta=25C
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()
VGS=2.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on)()
10
di/dt=50A/s
VGS=0V
Ta=25C
Pulsed
100
10
0.1
1
REVERSE DRAIN CURRENT : IDR(A)
Fig.15
10
2SK3065
Transistors
NORMALIZED TRANSIENT
THERMAL RESISTANCE : r(t)
10
D=1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
Ta=25C
th (ch-c) (t) = r (t) th (ch-c)
th (ch-c) =62.5C/W
0.01
Single pulse
PW
T
0.001
100
1m
10m
100m
D= PW
T
10
100
Fig.16
VGS
RG
ID
D.U.T.
VDS
VGS
90%
50%
10%
RL
50%
10%
VDS
10%
VDD
90%
90%
tr
td(on)
ton
td(off)
tf
toff