1

Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
I
Features
G High foward current transfer ratio h
FE
.
G Low collector to emitter saturation voltage V
CE(sat)
.
G M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC71
3:Emitter M Type Mold Package
6.90.1
0.550.1 0.450.05
1
.
0

0
.
1
1
.
0
2.50.1
1.0
1.5
1.5 R0.9
R0.9
R
0
.
7
0
.
4
0.85
3
.
5

0
.
1
2
.
0

0
.
2
2
.
4

0
.
2
1
.
2
5

0
.
0
5
4
.
1

0
.
2
4
.
5

0
.
1
2.5 2.5
1 2 3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
400
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
typ
0.3
150
3.5
max
1
1
460
0.5
Unit
A
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank Q R S
h
FE
160 ~ 260 210 ~ 340 290 ~ 460
2
Transistor 2SD637
P
C
Ta I
C
V
CE
I
B
V
BE
I
C
V
BE
I
C
I
B
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
0 160 40 120 80 140 20 100 60
0
500
400
300
200
100
Ambient temperature Ta (C)
C
o
l
l
e
c
t
o
r

p
o
w
e
r

d
i
s
s
i
p
a
t
i
o
n



P
C



(
m
W
)
0 10 8 2 6 4
0
60
50
40
30
20
10
Ta=25C
I
B
=160A
40A
20A
60A
80A
140A
120A
100A
Collector to emitter voltage V
CE
(V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t



I
C



(
m
A
)
0 1.0 0.8 0.2 0.6 0.4
0
1200
1000
800
600
400
200
V
CE
=10V
Ta=25C
Base to emitter voltage V
BE
(V)
B
a
s
e

c
u
r
r
e
n
t



I
B



(

A
)
0 2.0 1.6 0.4 1.2 0.8
0
200
160
120
80
40
V
CE
=10V
Ta=75C 25C
25C
Base to emitter voltage V
BE
(V)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t



I
C



(
m
A
)
0 1000 800 200 600 400
0
240
200
160
120
80
40
V
CE
=10V
Ta=25C
Base current I
B
(A)
C
o
l
l
e
c
t
o
r

c
u
r
r
e
n
t



I
C



(
m
A
)
0.1 1 10 100 0.3 3 30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(mA)
C
o
l
l
e
c
t
o
r

t
o

e
m
i
t
t
e
r

s
a
t
u
r
a
t
i
o
n

v
o
l
t
a
g
e



V
C
E
(
s
a
t
)



(
V
)
0.1 1 10 100 0.3 3 30
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
F
o
r
w
a
r
d

c
u
r
r
e
n
t

t
r
a
n
s
f
e
r

r
a
t
i
o



h
F
E
0.1 1 10 100 0.3 3 30
0
300
240
120
180
60
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
T
r
a
n
s
i
t
i
o
n

f
r
e
q
u
e
n
c
y



f
T



(
M
H
z
)
1 3 10 30 100
0
12
10
8
6
4
2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
l
l
e
c
t
o
r

o
u
t
p
u
t

c
a
p
a
c
i
t
a
n
c
e



C
o
b



(
p
F
)
3
Transistor 2SD637
NV I
C
h Parameter I
C
10 30 100 300 1000
0
240
200
160
120
80
40
V
CE
=10V
Ta=25C
Function=FLAT
4.7k
R
g
=100k
22k
Collector current I
C
(A)
N
o
i
s
e

v
o
l
t
a
g
e



N
V



(
m
V
)
0.1 0.3 1 3 10
0.1
100
10
1
0.3
3
30
V
CE
=5V
f=270Hz
h
fe
(100)
h
oe
(10
1
S)
h
ie
(10k)
h
re
(10
4
)
Collector current I
C
(mA)
h



P
a
r
a
m
e
t
e
r