TO-251/252 Plastic-Encapsulated Transistors

D882 TRANSISTOR (NPN)

FEATURES

Power dissipation
P
CM
: 1.25 W (Tamb=25)
Collector current
I
CM:
3 A
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test condi ti ons MIN TYP MAX UNIT
Col l ector-base breakdown vol tage V(BR)CBO Ic=100A, IE=0 40 V
Col l ector-emitter breakdown voltage V(BR)CEO Ic=10 mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 6 V
Collector cut-off current ICBO VCB=40V, IE=0 1 A
Collector cut-off current ICEO VCE=30V, IB=0 10 A
Emitter cut-off current IEBO VEB=6V, IC=0 1 A
hFE(1) VCE=2V, IC=1A 60 400
DC current gai n
hFE(2) VCE=2V, IC=100mA 32
Col l ector-emitter saturati on vol tage VCE (sat) IC=2A, IB=0.2 A 0.5 V
Base-emitter saturati on vol tage VBE (sat) IC=2A, IB=0.2 A 1.5 V
Transi ti on frequency fT
VCE=5V, Ic=0.1A
f =10MHz
50 MHz

CLASSIFICATION OF h
FE(1)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400












0. 51 0. 10
0. 51 0. 05
0 0. 10
1
.
6
0

0
.
1
5
9
.
7
0
0
.
2 0
0
.
7
5

0
.
1 0
2. 30 0. 10
6. 50 0. 15
5. 30 0. 10
0. 60 0. 10
0. 80 0. 10
2. 30 0. 10
2
.
7
0
0
.
2 0
2. 30 0. 10
5
.
5
0
0
.
1 0
1. 20
9
0. 51
0
.
6
0
5 5
5
1. 20
0. 51 0. 03
5
14
.70
2. 30 0. 05 2. 30 0. 05
0. 80 0. 05
0. 60 0. 05
5. 30 0. 05
6. 50 0. 10
0. 51 0. 03
7
.7
0
2. 30 0. 05
5
.5
0
0
.10
5
5
1 2 3
1 2 3
TO-251
TO-252-2



1. BASE

2. COLLECTOR

3. EMITTER
Transys
Electronics
L I M I T E D