FEATURES

D TrenchFETr Power MOSFETS

D 175_C Junction Temperature
SUB45N03-13L
Vishay Siliconix
Document Number: 71740
S-05010Rev. G, 05-Nov-01
www.vishay.com
1
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V) r
DS(on)
(W) I
D
(A)
30
0.013 @ V
GS
= 10 V 45
a
30
0.02 @ V
GS
= 4.5 V 45
a
D
G
S
N-Channel MOSFET
SUB45N03-13L
TO-263
S G
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
30
Gate-Source Voltage V
GS
"20 V
Continuous Drain Current (T
J
= 175_C)
T
C
= 25_C
I
D
45
a
Continuous Drain Current (T
J
= 175_C)
T
C
= 125_C
I
D
34
a
A
Pulsed Drain Current I
DM
100
A
Avalanche Current I
AR
45
Repetitive Avalanche Energy
b
L = 0.1 mH E
AR
100 mJ
Maximum Power Dissipation
b
T
C
= 25_C
P
D
88
c
W Maximum Power Dissipation
b
T
A
= 25_C
d
P
D
3.75
W
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient PCB Mount
d
R
thJA
40
_C/W
Junction-to-Case (Drain) R
thJC
1.7
_C/W
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1 square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
SUB45N03-13L
Vishay Siliconix
www.vishay.com
2
Document Number: 71740
S-05010Rev. G, 05-Nov-01
MOSFET SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA 30
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
DS
= 250 mA 1 3
V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
V
DS
= 30 V, V
GS
= 0 V 1
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C 50 mA g
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175_C 150
m
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V 45 A
V
GS
= 10 V, I
D
= 45 A 0.009 0.013
Drain Source On State Resistance
a
r
DS( )
V
GS
= 10 V, I
D
= 45 A, T
J
= 125_C 0.013 0.02
W Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 45 A, T
J
= 175_C 0.02 0.026
W
V
GS
= 4.5 V, I
D
= 20 A 0.0145 0.02
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 45 A 20 S
Dynamic
b

Input Capacitance C
iss
2000
Output Capacitance C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 370 pF
Reversen Transfer Capacitance C
rss
180
Total Gate Charge
c
Q
g
40 70
Gate-Source Charge
c
Q
gs V
DS
= 15 V, V
GS
= 10 V, I
D
= 45 A 7.5 nC
Gate-Drain Charge
c
Q
gd
DS
,
GS
,
D
8
Turn-On Delay Time
c
t
d(on)
11 20
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 0.33 W
9 20
ns
Turn-Off Delay Time
c
t
d(off)
V
DD
= 15 V, R
L
= 0.33 W
I
D
] 45 A, V
GEN
= 10 V, R
G
= 2.5 W 38 70
ns
Fall Time
c
t
f
D GEN G
11 20
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b

Continuous Current I
s
45
A
Pulsed Current I
SM
100
A
Forward Voltage
a
V
SD
I
F
= 45 A, V
GS
= 0 V 1 1.3 V
Reverse Recovery Time t
rr
35 70 ns
Peak Reverse Recovery Current I
RM(REC) I
F
= 45 A, di/dt = 100 A/ms 1.7 A
Reverse Recovery Charge Q
rr
F
, m
0.03 mC
Notes:
a. Pulse test; pulse width v300 ms, duty cycle v2%.
e. Guaranteed by design, not subject to production testing.
b. Independent of operating temperature.
SUB45N03-13L
Vishay Siliconix
Document Number: 71740
S-05010Rev. G, 05-Nov-01
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
500
1000
1500
2000
2500
3000
0 6 12 18 24 30
0
2
4
6
8
10
0 10 20 30 40
0
20
40
60
80
0 20 40 60 80
0.00
0.01
0.02
0.03
0.04
0.05
0 20 40 60 80
0
20
40
60
80
100
0 1 2 3 4 5
0
30
60
90
120
0 2 4 6 8 10
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V) V
GS
- Gate-to-Source Voltage (V)
-


D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D
-


G
a
t
e
-
t
o
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
Q
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
C


-


C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
V
G
S
V
GS
- Gate-to-Source Voltage (V)
-

T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e

(
S
)
g
f
s
25_C
- 55_C
3 V
T
C
= 125_C
V
DS
= 15 V
I
D
= 45 A
V
GS
= 10 thru 6 V
5 V
V
GS
= 10 V
C
iss
C
oss
C
rss
T
C
= - 55_C
25_C
125_C
4 V
V
GS
= 4.5 V
-


O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
-


D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D
2 V
SUB45N03-13L
Vishay Siliconix
www.vishay.com
4
Document Number: 71740
S-05010Rev. G, 05-Nov-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.5
0.9
1.3
1.7
- 50 - 25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
T
J
- Junction Temperature (_C) V
SD
- Source-to-Drain Voltage (V)
-


S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
I
S
100
10
1
0.3 0.6 0.9 1.2 1.5
V
GS
= 10 V
I
D
= 45 A
T
J
= 25_C
T
J
= 150_C
(
N
o
r
m
a
l
i
z
e
d
)
-


O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
THERMAL RATINGS
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
Safe Operating Area
V
DS
- Drain-to-Source Voltage (V)
200
10
0.1 1 10 100
Limited
by r
DS(on)
1
100
T
C
= 25_C
Single Pulse
Maximum Drain Current vs.
Case Temperature
T
C
- Case Temperature (_C)
-

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D
1 ms
10 ms
100 ms
dc
10 ms
100 ms
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
N
o
r
m
a
l
i
z
e
d

E
f
f
e
c
t
i
v
e

T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
3
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
-

D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D
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