NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Halogen-Free & Lead-Free

D
PRODUCT SUMMARY V(BR)DSS 25V RDS(ON) 20m ID 32A 1. GATE 2. DRAIN 3. SOURCE

G S

ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation L = 0.1mH TC = 25 C TC = 100 C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink
1 2 1

SYMBOL VDS VGS

LIMITS 25 20 32 20 110 23 27 35 14 -55 to 150

UNITS V V

TC = 25 C TC = 100 C

ID IDM IAS EAS PD Tj, Tstg

mJ W C

SYMBOL RJC RJA RCS

TYPICAL

MAXIMUM 3.6 75

UNITS

C / W

0.7

Pulse width limited by maximum junction temperature. Duty cycle 1

ELECTRICAL CHARACTERISTICS (T C = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 C VDS = 10V, VGS = 10V 110 25 1.0 1.8 2.5 250 25 250 A A nA V LIMITS UNIT MIN TYP MAX

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NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Halogen-Free & Lead-Free

Drain-Source On-State Resistance

1 1

RDS(ON) gfs

VGS = 4.5V, ID = 10A VGS = 10V, ID = 15A VDS = 5V, ID = 15A DYNAMIC

29 14 19

41 20

m S

Forward Transconductance

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge
2

Ciss Coss Crss Rg Qg (VGS=10V) Qg(VGS=4.5V)

2

492 VGS = 0V, VDS = 15V, f = 1MHz 221 187 VGS = 0V, VDS = 0V, f = 1MHz 1.5 14.7 VDS = 15V, ID = 15A 7.7 2.3 5.6 10 VDD = 15V ID 15A, VGS = 10V, RGS = 6 17 34 27 nS nC pF

Gate-Source Charge Gate-Drain Charge Rise Time2 Turn-Off Delay Time Fall Time2
2

Qgs Qgd

Turn-On Delay Time

td(on) tr

td(off) tf

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 C) Continuous Current Forward Voltage1 Reverse Recovery Time Reverse Recovery Charge
1 2

IS VSD trr Qrr IF = 15A, VGS = 0V IF = 15A, dlF/dt = 100A / S 27 36

25 1.4

A V nS nC

Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature.

REMARK: THE PRODUCT MARKED WITH P2003BDG, DATE CODE or LOT #

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NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Halogen-Free & Lead-Free

Output Characteristics
100
100

Transfer Characteristics
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

80

V G S = 10V

V G S = 6V

80

60

60

V G S = 4.5V

40

40 TJ=125 C TJ=25 C 20 TJ=-20 C 0 0.0

20

V GS = 3V

0 0 1 2 3 4 5

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

VDS, Drain-To-Source Voltage(V)

VGS, Gate-To-Source Voltage(V)

On-Resistance VS Temperature
RDS(ON) RDS(ON)

Capacitance Characteristic
8.00E+02 7.00E+02 6.00E+02

2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
V GS=10V ID=15A

RDS(ON),ON-Resistance(OHM)

RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON)

C , Capacitance(pF)

5.00E+02 Ciss 4.00E+02 3.00E+02 2.00E+02 1.00E+02 0.00E+00 0 5 10 15 20 25 30 Coss Crss

TJ , Junction Temperature(C)

VDS, Drain-To-Source Voltage(V)

10

VGS , Gate-To-Source Voltage(V)

Gate charge Characteristics Characteristics

ID=15A V DS=15V

Source-Drain Diode Forward Voltage

1.0E+03 1.0E+02 1.0E+01 T J =150 C

IS , Source Current(A)

1.0E+00 T J =25 C 1.0E-01 1.0E-02 1.0E-03

0 0 3 6 9 12 15

1.0E-04 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Qg , Total Gate Charge

VSD, Source-To-Drain Voltage(V)

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NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Halogen-Free & Lead-Free

Safe Operating Area

1000 Operation in This Area is Lim ited by RDS(ON)

Single Pulse Maximum Power Dissipation

500

400

ID , Drain Current(A)

100

Power(W)
300 200

SINGLE PULSE RJC = 3.6 C/W T C=25 C

100us 10 NOTE : 1.V GS= 10V 2.T C=25 C 3.RJC = 3.6 C/W 4.Single Pulse 1 1 10

100
1m s 10ms DC 100

0 0.0001 0.001 0.01 0.1 1 10

VDS, Drain-To-Source Voltage(V)

Single Pulse Time(s)

Transient Thermal Response Curve

1.00E+01

Transient Thermal Resistance

r(t) , Normalized Effective

1.00E+00
Duty Cycle=0.5

0.2 0.1

Note

1.00E-01

0.05 0.02 0.01 single Pluse

1.Duty cycle, D= t1 / t2 o 2.RthJC = 3.6 C/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC

1.00E-02 1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

T1 , Square Wave Pulse Duration[sec]

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NIKO-SEM

N-Channel Logic Level Enhancement Mode Field Effect Transistor

P2003BDG
TO-252 (DPAK) Halogen-Free & Lead-Free

REV 1.0 5

Sep-09-2009