ST 13002

NPN Silicon Epitaxial Planar Transistor

High voltage power transistor

Absolute Maximum Ratings (Ta = 25 OC)

Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Total Dissipation Operating Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Ptot Tj Tstg

TO-92 Plastic Package Weight approx. 0.19g

Value 700 400 9 0.2 0.5 0.6 150 - 55 to + 150

Unit V V V A A W
O

C C

Characteristics at Ta = 25 OC
Parameter DC Current Gain at VCE = 10 V, IC = 10 A at VCE = 10 V, IC = 100 mA at VCE = 10 V, IC = 200 mA Collector Cutoff Current at VCB = 700 V Emitter Cutoff Current at VEB = 7 V Collector Base Breakdown Voltage at IC = 10 mA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IC = 1 mA Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA at IC = 200 mA, IB = 20 mA Transition Frequency at VCE = 10 V, IC = 100 mA Symbol hFE hFE hFE ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCEsat fT Min. 10 20 10 700 400 9 4 Max. 40 40 40 100 10 0.5 2.5 Unit A A V V V V MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 16/09/2006