C2073 NPN Epitaxial Silicon Transistor

TO-220

TV VERTICAL DEFLECTION OUTPUT

Complement to A940 Collector-Emitter Voltage: VCEO=150V Collector Dissipation: PC(max)=25W

Absolute Maximum Ratings (TA=25oC)

Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ TSTG Rating 150 150 5 1.5 25 150 -55~+150 Unit V V V A W
o o

C C 1. Base 2. Collector 3. Emitter

Electrical Characteristics (TA=25oC)

Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) COB fT Test Conditions IC=500A, IE=0 IC=10mA, IB=0 IC=500A, IE=0 VCB=120V, IE=0 VCE=10V, IC=0.5A IC=500mA, IC=0.5A VCB=10V, IE=0, f=1MHz VCE=10V, IC=0.5A 50 4 40 75 Min 150 150 5 10 140 1 V pF MHz Typ Max Unit V V V A

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