ESE319 Introduction to Microelectronics

Class B Output Stage

, , ,

Class B Operation Multisim Simulations Class B Power Efficiency

2008 Kenneth R. Laker updated 28Nov11

ESE319 Introduction to Microelectronics

Class B Amplifier Operation

V B " 0 V % v I +0.7 V

NOTE: 1. when vI < 0.7V, iC = 0

2. a 2nd class B BJT is needed to conduct for the negative vI cycle.

2

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ESE319 Introduction to Microelectronics

Quick Review
Class-A Amp Power Inventory f(Vo-peak) max f(Vo-peak) Power from dc sources: P D av " 2 V CC I
Let max V0-peak = VCC

P D av 0 max 1"2 V CC I
1 V CC 1 P L av 0 max 1" " V I 2 R L 2 CC
1 3max " "0.25 4
P Disp 0 max 1"2 V CC I 3 P Disp 0 min 1" V CC I 2
3
2

Power output to load: Power Conversion Efficiency: Power dissipation

2008 Kenneth R. Laker updated 28Nov11

2 V 1 o & peak P L av " 2 RL

1 V o & peak 3" 4 I R L V CC

2 1 V o & peak P Disp " 2 V CC I & 2 RL

ESE319 Introduction to Microelectronics

The Class B Output Stage

i CN
For vI > 0.7 V V BEN " v I & vO vO " v I & 0.7 V For vI < -0.7 V V EBP " v O & v I vO " v I - 0.7 V

0. For -0.7 V ! vI ! 0.7 V, QN and QP cutoff. => vO = 0 V I. For vI > VBEN = 0.7 V, QN = ON, Qp = OFF. a. i L "i EN ) iCN b. QN saturates if vO > VCC - VCENsat. c. QP is cut off for vI > -0.7 V.
The output voltage vO follows the input vI - VBEN up to vO = VCC VCENsat where QN saturates.

i EN i EP

i CP

II. For vI < -VEBP = -0.7 V, QP = ON, QN = OFF.

2008 Kenneth R. Laker updated 28Nov11

ESE319 Introduction to Microelectronics

The Class B Output Stage

i CN
For vI > 0.7 V V BEN " v I & vO vO " v I & 0.7 V For vI < -0.7 V V EBP " v O & v I vO " v I - 0.7 V

0. For -0.7 V ! vI ! 0.7 V, QN and QP cutoff. => vO = 0 V I. For vI > VBEN = 0.7 V, QN = ON, Qp = OFF. II. For vI < -VEBP = -0.7 V, QP = ON, QN = OFF. a. i L "&i EP )&i CP b. QP saturates if vO < - VCC + VECPsat c. QN is cut off for vI < 0.7 V.
The output voltage vO follows the input vI + VEBP down to vO = - VCC + VECPsat where QP saturates.

i EN i EP

i CP

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ESE319 Introduction to Microelectronics

Class B Amplifier VTC Plot

QN saturated

v o" v i & 0.7 V

For: 0.7 V . v i .0 V CC &V CENsat 1-0.7 V

-0.7 V

0.7 V

Class A VTC
QP saturated

v o" 0 V For: &0.7 V . v i .0.7 V v o" v i - 0.7 V For: &0 V CC &V ECPsat 1&0.7 V . v i .&0.7 V

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ESE319 Introduction to Microelectronics

Class B Crossover Distortion

Crossover distortion in audio power amps produces unpleasant sounds.

2008 Kenneth R. Laker updated 28Nov11

ESE319 Introduction to Microelectronics

Multisim Simulation Class B VTC

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ESE319 Introduction to Microelectronics

Multisim Simulation Class B VTC - cont.

2008 Kenneth R. Laker updated 28Nov11

ESE319 Introduction to Microelectronics

Multisim Simulation Class B Crossover Distortion

The dead band from -VEBP = -0.7 V < vi < VBEN = 0.7 V causes crossover distortion. This distortion is severe, particularly for low voltage signals.
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Class B Power Analysis

Simplifying Assumptions: 1. Ignore the dead-zone in VTC. 2. Let VCEN-sat = VECP-sat = 0 V => maximum vO swing is &V
CC

* v o *V CC

The average power to the load resistor RL: v O "V o& peak sin 05 t 1 2 2 V o & rms 1 V o & peak same as Class A P L av "V o& rms I o &rms " " RL 2 RL The average power delivered by the positive +VCC power supply over the positive half-cycle 0 ! t ! T/2 (iC = 0 from T/2 ! t ! T ):
P -V V o & peak 24 1 1 1 " V i dt " V i dt " V sin 0 t 1 dt ( ( ( av CC CN CC L CC T 0 T 0 T 0 RL T 5
11
T 2 T 2 T 2

CC

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ESE319 Introduction to Microelectronics

Class B Power Analysis - cont.

From previous slide
CC

V o & peak V o& peak 24 24 1 P -V ( V CC R sin 0 T t 1 dt " T V CC R ( sin 0 T t 1 dt L L 0 0 &1 Recalling from calculus ( sin 05 t 1 dt " cos 05 t 1 5 1 " av T

T !2

T !2

P -V P -V

CC

t = T/2 V o& peak &T 24 1 V 0 cos 0 t 11 t = 0 av " T CC R L T 24

CC

1 V o& peak 2 T 2 V CC #cos 0 4 1&cos 0 4 0 1$ av "& R T 2 T 24 L

CC

P -V

-1 1 1 V o& peak V CC #cos 041&cos 0 0 1$ av "& 2 4 RL 1 V o& peak P -V av " V CC 4 RL

CC

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ESE319 Introduction to Microelectronics

Class B Power Analysis - cont.

Power delivered by the negative VCC power source is equal to that for +VCC: 1 V o & peak P &V av " P -V av " V CC 4 RL
CC CC

Hence:

P D av " P -V

CC

av

- P &V

CC

2 V o& peak V CC av " 4 RL

The power conversion efficiency of the class B amplifier (accurate for |Vo-peak| > 0.7 V) is: 2 1 V o& peak P L av 2 RL 4 V o & peak 3" " " P D av 2 V o & peak 4 V CC V CC 4 RL
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ESE319 Introduction to Microelectronics

Class B Power Analysis - cont.

Maximum Class B power conversion efficiency: Since we assume &V CC * v o *V CC
4 V o & peak 4 3" %3max " "0.785 or 78.5 % 4 V CC 4

Recall for Class A: 3max "0.25 or 25 %

Power Dissipation:
Class B power dissipated in the transistors: 2 V V 2 o& peak 1 o& peak P Disp " P D av & P L av " V CC & 2 RL 4 RL
P Disp 0V o & peak "0 1"0
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ESE319 Introduction to Microelectronics

Class B Power Analysis - cont.

P Disp "0 when Vo-peak = 0 2 2 V o& peak 1 V o& peak P Disp " P D av & P L av " V CC & R 2 RL 4 L

What value of Vo-peak results in the maximum PDisp?

To estimate maximum PDisp: set derivative of PDisp w.r.t. Vo-peak to zero, i.e.

d P Disp 2 V CC V o& peak " & "0 d V o& peak 4 R L RL

=>

2 V o & peak " V CC .V CC 4

2 2 2 4 V CC 1 4 V CC 2 V CC P Disp 0 max 1" 2 & " 2 2 R 2 R 4 4 4 RL L L

with V o & peak " V CC

2 4

! PDisp(max) is dissipated in QN and ! PDisp(max) is dissipated in QP.

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ESE319 Introduction to Microelectronics

Class B Power Analysis Summary

Power from sources:
max V0-peak = VCC

2 V o & peak P D av " V CC 4 RL

2 V 1 o & peak P L av " 2 RL

2 V 2 CC P D av 0 max 1" 4 RL 2 V 1 CC P L av 0 max 1" 2 RL

Power output to load:

max V0-peak = VCC

Power Conversion Efficiency:

4 V o & peak 3" 4 V CC

4 3max " ) 0.785 4

2 2 V CC P Disp 0 max 1" 2 4 RL

2 V V 2 o & peak 1 o& peak Transistor dissipation P Disp " V CC & 2 RL 4 RL Q +Q :

Max dissipation at:

2008 Kenneth R. Laker updated 28Nov11

V o & peak "

2 V CC 4

3max& Disp "0.5

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ESE319 Introduction to Microelectronics

Power Dissipation Function Plot

P Disp

Let VCC = 12 V and R L "100 2

P Disp 0 max 1" 2 V CC 4 RL
2 2

"0.29 W

2 V o & peak 1 V o & peak P Disp & B " V CC & 4 RL 2 RL

PDisp(max) = 0.29 W 0.20 W

0.7 V Not accurate for small Vo-peak.

2008 Kenneth R. Laker updated 28Nov11

V o & peak
= 7.63 V

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ESE319 Introduction to Microelectronics

Power Conversion Efficiency vs. Output Voltage Amplitude

0.8 0.7 0.6 0.5
Efficiency 031 0.4

Let VCC = 12 V

3max & B "0.785

P Disp 0 max 1 @ V o & peak " 2 V CC

4 V o& peak 3Class B " 4 V CC

3max & A "0.25

0.3 0.2 0.1 0.0 0 2 4 8 V o & peak 0 Volts 1 6 10

1 V o& peak 3Class A " 4 V CC

12 18

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ESE319 Introduction to Microelectronics

Class B Audio Amplifier Example

It is required to design a Class B output stage to deliver an average power of 20 W to an 8 2 speaker load. To avoid saturation of the transistors and nonlinear distortion, the power supply VCC is to be 5V greater than peak output voltage. 1. Determine the VCC required. 2. Determine peak current drawn from each power supply. 3. Determine the total power drawn from the power supplies. 4. Determine the power conversion efficiency. 5. Determine the max power each transistor must be able to dissipate safely.

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ESE319 Introduction to Microelectronics

Class B Audio Amplifier Example - cont.

SOLUTION:
1. Determine the VCC required. P L av "20 W and R L "8 2
2 1 V o & peak P L av " "20 W % V o& peak " / 2 P L & av R L "/ 2'20'8 "17.9 V 2 RL

V CC "V o & peak -5 V "17.9 V -5 V "23 V

2. Determine peak current drawn from each power supply. V o& peak 17.9 V I o & peak " " " 2.24 A RL 82

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ESE319 Introduction to Microelectronics

Class B Audio Amplifier Example - cont.

SOLUTION cont.:
3. Determine the total power drawn from the power supplies. 2 V o & peak 2 17.9 V P D av " V CC " 23 V "32.8 W 4 RL 4 82 4. Determine the power conversion efficiency. 4 V o & peak 4 17.9 V 3" " " 0.61 or 61 % 4 V CC 4 23 V 5. Determine the max power each transistor must dissipate safely.
2 V 1 1 CC 1 0 23 V 12 P DispN 0 max 1" P DispP 0 max 1 " P Disp 0 max 1" 2 " 2 " 6.7 W 2 R 4 4 82 L
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ESE319 Introduction to Microelectronics

Multisim Simulation Max Power Dissipation

vO " v I & 0.7 V
P -V
CC

P-V

CC

av

P L &av

av "

1 V o& peak V CC 4 RL = 0.265 W

2

Vi-peak = 7.63 V P&V

CC

1 V o & peak P L av " 2 RL = 0.240 W

av

vO " v I 0.7 V
P &V
CC

av "

1 V o & peak V CC 4 RL = 0.265 W

3sim "

P -V

CC

P L av av - P &V

"
CC

av

0.2198 " 0.45 0.2429 - 0.2449

3theory "

PV

CC

P L av av - P V

"
CC

av

0.240 " 0.45 0.265- 0.265

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ESE319 Introduction to Microelectronics

Multisim Simulation Max Power Conversion Efficiency

P-V
CC

av

P L av

Vi-peak = 12.7 V
vO " v I 0.7 V

P&V
3sim " P -V
CC

CC

av

P L av av - P &V

"
CC

av

0.6772 " 0.78 0.4231 -0.4239

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ESE319 Introduction to Microelectronics

Anticipating Class AB Eliminating Crossover Distortion

If we bias the bases of the emitter follower pair, we can set both transistors on the verge of conduction or have them conduct a small bias current with zero signal input:
V BB ) 0.7 V. 2

Class AB is a compromise between Class and Class B

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ESE319 Introduction to Microelectronics

Summary
Class B advantages: 1. Much higher power conversion efficiency than class A for large signal amplitudes. 2. Zero power dissipation with zero input. Class B disadvantage: Higher distortion than class A, especially at low input amplitudes. Class AB operation is a compromise mode: 1. Delivering better linearity than class B, with reduced efficiency. 2. Delivering better efficiency than class A, with reduced linearity.
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