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VG > Vtp nMOS structure

Phosphorous has a valence of 5 Gate Si Depletion layer + + + + + + + + p+ n

QB

+P

Mobile negative charge (from a P atom) ____________________


Analog CMOS/VLSI Design, Spring 2014

Net immobile positive charge 18

nMOS structure

VG < Vtp

Gate Inversion + + + + + + + + + layer + + + + + p Depletion + + + + layer n

Qp QB

Surface charge Q s = QB + Q p
____________________
Analog CMOS/VLSI Design, Spring 2014

19

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