Sept.

16, 2011 MOS-AK Workshop, Helsinki

The EKV Char e-!ase" MOS#ET Mo"el

Christian Enz1,2
1) Swiss Center for Electronics and Microtechnology (CSEM), Neuchtel, Switzerland 2) Swiss Federal nstitute of !echnology, "ausanne (E#F"), Switzerland

A $on Histor% & The Earl% 'a%s

Finds its roots in the first models presenting weak inversion published in the 70s First harge!based approa h taken b" #espers and $emelink %1&77' (ulk!referen ed s"mmetri al model proposed b" Ch)telain, but onl" for strong inversion %1&7&' First model ontinuous from weak to strong inversion b" *gue" and Cserven" %1&+2', simplified later on b" ,ittoz for analog design purpose -inearization of inversion harge versus surfa e potential originall" proposed in b" the pioneering work of $aher and $ead %1&+7' First E., paper des ribing E.,2 b" Enz, .rummena her and ,ittoz %1&&/' First E., harge!based formulation b" (u her %1&&7' 0imilar approa h b" Cunha %1&&7' 1nversion harge linearization redis overed b" 2ummel and 0inghal %2001' 3igorous derivation of inversion harge linearization of the E., b" 0allese %2004'
C5 Enz, 67 0hort 0tor" of the E., $*0 8ransistor $odel,9 00C0 :ewsletter, ,ol5 14, :o5 4, 200+5
C. Enz | 2011 The EKV Charge-based MOSFET Model Slide 2

A $on Histor% & The Co(pa)t Mo"elin Sta e

:on!uniform doping was proposed b" -allement %1&&;' E., ompa t model 25; released in 1&&7 b" $5 (u her 1mplementation in most ommer iall" available ir uit simulator b" $5 (u her E<tension of E., to 3F C$*0 b" Enz %1&&&' Charge!based :=0 model added b" 0allese and >orret %2000' =uantum and pol"depletion effe ts b" -allement %2004' 7 urate thermal noise model developed b" 3o" %200/' 0ele tion of E.,4 %(azigos and (u her' among ? other C$ b" the C$C %200/' 7 urate fli ker noise model added b" Enz %200;' >ubli ation of the book 6Charge!(ased $*0 8ransistor $odeling ! 8he E., $odel for -ow!>ower and 3F 1C @esign,9 b" Enz and ,ittoz %200;' E<tension of E., to ballisti ABuasi!ballisti transport b" $angla %2011'
C5 Enz, 67 0hort 0tor" of the E., $*0 8ransistor $odel,9 00C0 :ewsletter, ,ol5 14, :o5 4, 200+5
C. Enz | 2011 The EKV Charge-based MOSFET Model Slide 3

The $ink !et*een +ro)ess an" 'esi ners

E., is not onl" a ompa t model but also a low!power analog!3F "esi n (etho"olo % based on the in,ersion )oe--i)ient E., establishes the link between pro ess and designer

C5 Enz, 67 0hort 0tor" of the E., $*0 8ransistor $odel,9 00C0 :ewsletter, ,ol5 14, :o5 4, 200+5
C. Enz | 2011 The EKV Charge-based MOSFET Model Slide 4

What.s /e0t1 & 2S3M-EKV tea(-4p

(01$ and E., groups have agreed to ollaborate on the long!term development and support of (01$; as an open!sour e $*0FE8 0>1CE model for worldwide use5 8his is an e< iting opportunit" to leverage the long histor" and large user base of the (01$ model with the long e<perien e and a tive role of E., in furthering harge!based ompa t model5

2S3M
C. Enz | 2011 The EKV Charge-based MOSFET Model

EKV
Slide 5