2N3819

Vishay Siliconix

N-Channel JFET

PRODUCT SUMMARY
VGS(off) (V)
v 8

V(BR)GSS Min (V)

25

gfs Min (mS)

2

IDSS Min (mA)

2

FEATURES
D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 60 @ 100 mA

BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification

APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches

DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good performance at mid-to-high frequencies. It features low noise and leakage and guarantees high gain at 100 MHz. Its TO-226AA (TO-92) package is compatible with various tape-and-reel options for automated assembly (see Packaging Information). For similar products in TO-206AF (TO-72) and TO-236 (SOT-23) packages, see the 2N4416/2N4416A/SST4416 data sheet.

TO-226AA (TO-92)
S 1

Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C Document Number: 70238 S04028Rev. D ,04-Jun-01 Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com

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2N3819
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Drain Cutoff Current Drain-Source On-Resistance Gate-Source Voltage Gate-Source Forward Voltage V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS VGS(F) IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 2 nA VDS = 15 V, VGS = 0 V VGS = 15 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA VDS = 10 V, VGS = 8 V VGS = 0 V, ID = 1 mA VDS = 15 V, ID = 200 mA IG = 1 mA , VDS = 0 V 0.5 2 25 35 3 10 0.002 0.002 20 2 150 2.5 0.7 7.5 V pA W V 8 20 2 2 mA nA mA

Symbol

Test Conditions

Min

Typa

Max

Unit

Dynamic
Common-Source Forward Transconductancec Common-Source Output Conductancec Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec f = 1 kHz gfs gos Ciss Crss en VDS = 15 V VGS = 0 V f = 100 MHz f = 1 kHz VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 0 V, f = 100 Hz 2 1.6 5.5 5.5 25 2.2 0.7 6 50 8 4 pF nV Hz NH 6.5 mS mS

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v2%. c. This parameter not registered with JEDEC.

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
20 10 rDS(on) Drain-Source On-Resistance ( ) gfs Forward Transconductance (mS) 500 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz

On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage

100

IDSS Saturation Drain Current (mA)

16

IDSS

400

80

gos Output Conductance (mS)

12

gfs

300

rDS gos

60

200

40

IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDS = 15 V, VGS = 0 V f = 1 kHz

100

20

0 0 2 4 6 8 10

0 VGS(off) Gate-Source Cutoff Voltage (V)

0 0 2 4 6 8 10 VGS(off) Gate-Source Cutoff Voltage (V)

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Document Number: 70238 S04028Rev. D ,04-Jun-01

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
100 nA

Gate Leakage Current

10 5 mA

Common-Source Forward Transconductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

10 nA TA = 125_C

gfs Forward Transconductance (mS)

1 mA 0.1 mA

8 TA = 55_C 6 25_C 4 125_C 2

IG Gate Leakage

1 nA

100 pA 5 mA 10 pA TA = 25_C 1 mA 0.1 mA

IGSS @ 125_C

1 pA

IGSS @ 25_C

0.1 pA 0 10 VDG Drain-Gate Voltage (V) 20

0 0.1 1 ID Drain Current (mA) 10

Output Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) VGS = 0 V 6 0.2 V 0.4 V 4 0.6 V 0.8 V 2 1.0 V 1.2 V 1.4 V 0 2 4 6 8 10 12 15

Output Characteristics
VGS(off) = 3 V

VGS = 0 V 9 0.3 V 0.6 V 6 0.9 V 1.2 V 3 1.5 V 1.8 V

0 0 2 4 6 8 10 VDS Drain-Source Voltage (V)

VDS Drain-Source Voltage (V)

Transfer Characteristics
10 VGS(off) = 2 V 8 ID Drain Current (mA) ID Drain Current (mA) TA = 55_C 6 25_C VDS = 10 V 8 10

Transfer Characteristics
VGS(off) = 3 V VDS = 10 V

TA = 55_C 6 125_C 4 25_C

125_C

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

Document Number: 70238 S04028Rev. D ,04-Jun-01

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2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage
10 VGS(off) = 2 V gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 8 TA = 55_C 6 25_C 10 VGS(off) = 3 V VDS = 10 V f = 1 kHz

Transconductance vs. Gate-Source Voltgage

125_C

125_C

0 0 0.4 0.8 1.2 1.6 2 VGS Gate-Source Voltage (V)

0 0 0.6 1.2 1.8 2.4 3 VGS Gate-Source Voltage (V)

On-Resistance vs. Drain Current

300 rDS(on) Drain-Source On-Resistance ( ) TA = 55_C 240 AV Voltage Gain VGS(off) = 2 V 180 3 V 120 80 100

Circuit Voltage Gain vs. Drain Current

g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 10 V ID

60

VGS(off) = 2 V 40

60

20 3 V

0 0.1 1 ID Drain Current (mA) 10

0 0.1 1 ID Drain Current (mA) 10

Common-Source Input Capacitance vs. Gate-Source Voltage

5 Crss Reverse Feedback Capacitance (pF) f = 1 MHz 4 Ciss Input Capacitance (pF) 3.0

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage

f = 1 MHz 2.4

VDS = 0 V

1.8

1.2

VDS = 0 V

VDS = 10 V

0.6

VDS = 10 V

0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)

0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)

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Document Number: 70238 S04028Rev. D ,04-Jun-01

2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Input Admittance
100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 100

Forward Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source

bis 10 gis

10 (mS) (mS)

gfs

bis 1

0.1 100

200

500

1000

0.1 100

200

500

1000

f Frequency (MHz)

f Frequency (MHz)

Reverse Admittance
10 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10

Output Admittance
TA = 25_C VDS = 15 V VGS = 0 V Common Source

brs

bos

1 (mS) (mS)

1 gos

grs 0.1 0.1

0.01 100

200

500

1000

0.01 100

200

500

1000

f Frequency (MHz)

f Frequency (MHz)

Equivalent Input Noise Voltage vs. Frequency

20 VGS(off) = 3 V Hz 16 VDS = 10 V gos Output Conductance (mS) 16 20

Output Conductance vs. Drain Current

VGS(off) = 3 V VDS = 10 V f = 1 kHz

en Noise Voltage nV /

TA = 55_C 12 25_C 8 125_C 4

12

8 ID = 5 mA 4 ID = IDSS 0 10 100 1k f Frequency (Hz) 10 k 100 k

0 0.1

1 ID Drain Current (mA)

10

Document Number: 70238 S04028Rev. D ,04-Jun-01

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