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  • Transistor S8050 Datasheet

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    naupas007
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    This document provides specifications for an NPN general purpose transistor in a TO-92 package. It lists absolute maximum ratings, electrical characteristics including breakdown voltages and cutoff currents, on characteristics such as current gain and saturation voltages, and dimensions for the TO-92 package. Key specifications include a collector-emitter voltage rating of 25V, current gain of 85-300, saturation voltage below 1.2V, and package dimensions between 3.3-4.7mm.

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    Datasheet de caracteristicas tecnicas

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    © Attribution Non-Commercial (BY-NC)

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    This document provides specifications for an NPN general purpose transistor in a TO-92 package. It lists absolute maximum ratings, electrical characteristics including breakdown voltages and cutoff currents, on characteristics such as current gain and saturation voltages, and dimensions for the TO-92 package. Key specifications include a collector-emitter voltage rating of 25V, current gain of 85-300, saturation voltage below 1.2V, and package dimensions between 3.3-4.7mm.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Segnala contenuti inappropriati
    2K visualizzazioni4 pagine

    Transistor S8050 Datasheet

    Caricato da

    naupas007
    This document provides specifications for an NPN general purpose transistor in a TO-92 package. It lists absolute maximum ratings, electrical characteristics including breakdown voltages and cutoff currents, on characteristics such as current gain and saturation voltages, and dimensions for the TO-92 package. Key specifications include a collector-emitter voltage rating of 25V, current gain of 85-300, saturation voltage below 1.2V, and package dimensions between 3.3-4.7mm.

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    Attribution Non-Commercial (BY-NC)
    Segnala contenuti inappropriati
    di 4

    S8050

    NPN General Purpose Transistors


    TO-92

    1. EMITTER 2. BASE 3. COLLECTOR

    ABSOLUTE MAXIMUM RATINGS (Ta=25 C)


    Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 25 40 5.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C

    ELECTRICAL CHARACTERISTICS
    Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0) Collector Cutoff Current (VCE= 20 Vdc, I B =0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.0Vdc, I C =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min 25 40 5.0 Max 0.1 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc

    WEITRON
    http://www.weitron.com.tw

    S8050
    ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
    Characteristics Symbol Min TYP Max Unit

    ON CHARACTERISTICS
    DC Current Gain (IC= 50 Adc, VCE=1.0 Vdc) DC Current Gain (IC= 500 mAdc, VCE= 1.0 Vdc) Collector-Emitter Saturation Voltage (IC= 500 Adc, IB= 50 mAdc) Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= 50 mAdc) Current-Gain-Bandwidth Product (IC= 20 mAdc, VCE=6.0 Vdc, f=30MHz) hFE (1) hFE (2) VCE(sat) VBE(sat)
    fT

    85 50 150

    300 0.6 1.2

    Vdc Vdc

    MHz

    Classification of hFE(1) Rank Range B 85-160 C 120-200 D 160-300

    WEITRON
    http://www.weitron.com.tw

    S8050

    WEITRON
    http://www.weitron.com.tw

    S8050
    TO-92 Outline Dimensions
    E

    unit:mm

    TO-92
    H
    C

    J K

    Dim A B C D E G H J K L

    Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50

    WEITRON
    http://www.weitron.com.tw

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