EE 3052 Power Electronics & Applications I

Power Semiconductor Devices

Name Field

: W.M.C.N.S.Kirinde : Electrical Engineering

Index No. : 100255K

Power Electronic Devices

1. Zener Diode
1N4742A

anode

cathode

Symbol: Characteristics: Zener Voltage = 12V Test Current = 21mA Maximum Reverse Currents = 5 A @ 9.1V Maximum DC Current = 380 mA Maximum Junction Temperature = 2000C

Features: High Reliability Very sharp reverse characteristics Low reverse current level Vz tolerance 5%

Application: Voltage Stabilization

2. Shottkey Diode 1N5711

cathode anode

Symbol: Characteristics: Peak Inverse Voltage = 70V Power dissipation = 400mW Thermal Resistance Junction to Ambient Air = 0.30C/mW Junction Temperature = 1250C Storage Temperature Range = -550C to +1500C Reverse Breakdown Voltage = 70V Maximum Leakage Current = 200nA Maximum Forward Voltage Drop = 1V @ 15mA Reverse Recovery Time = 1ns

Application: General Purpose Applications

3. Diac 31C5291

anode 1

anode 2

Symbol: Characteristics: Maximum Trigger Firing Capacitance = 0.15 F Device Dissipation = 250mW Operating Junction Temperature Range = -400C to +1250C Storage Temperature Range = -400C to +1250C Thermal Resistance, Junction to Ambient = 2780C/W Thermal Resistance, Junction to Lead = 1000C/W Lead Temperature = 2300C Minimum Breakover Voltage = 56V Maximum Breakover Voltage = 70V

4. Triac BTA41-600BRG

gate anode 2 anode 1

Symbol: Characteristics: On state rms current = 41A Repetitive peak off-state voltage = 600V and 800V Triggering gate current = 50mA

Features: High current triac Low thermal resistance with clip bonding High communication capability

Applications: On/off function in static relays, heating regulation, induction motor starting circuits Phase control operations in light dimmers, motor speed controllers

5. Gate Turn Off (GTO) Thyristers S4S2RP

gate anode cathode

Symbol: Characteristics: Max average On state current = 0.51A Repetitive peak off-state voltage = 400V Triggering gate current = 50 A

Features: RoHS compliant Electricity Isolated High Voltage capability upto 600V High Surge capability upto 100A Glass-passivated chip

6. Bipolar Junction Transistors (BJT) BC847B

base

collector

emmiter Symbol: Characteristics: Max Collector-Emitter voltage (VBE=0) = 50V Max Collector-Emitter voltage (Open Base) = 45V Max Collector current = 200mA Total power dissipation = 250mW Max Junction Temperature = 1500C

Features: Silicone planar epitaxial transistors General purpose NPN transistors High Voltage capability upto 600V High Surge capability upto 100A Glass-passivated chip

7. Metal Oxide Semiconductor Field Effect Transistors (MOSFET) BC847B

source gate drain

Symbol: Characteristics: Drain-Source voltage = 60V Drain-Gate voltage = 60V Gate-Source Voltage = 20V Continuous Drain Current = 500mA Operating and storage Temperature range = -55 to 1500C Max power dissipation = 830mW Thermal Resistance junction to ambient = 1500C/W

Features: High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

8. Insulated Gate Bipolar Transistors (IGBT) IRGSL14C40L

emitter gate collector

Symbol: Characteristics: Max Continuous Collector Continuous @ ambient temp. = 20A Max Continuous Gate current = 1mA Peak gate current = 10mA Max power dissipation @ ambient temp. = 125W Operating Junction & Storage Temperature Range = -40 to 1750C

Features: Most rugged in industry Logic level gate drive >6KV ESD Gate protection Low saturation voltage High self-clamped inductive switching energy Lead-free

9. MOS Controlled Thyrister (MCT) MCTV35P60F1D

A A K GR G Symbol:

Characteristics: Peak Off-State Voltage = -600V Continuous Cathode Current @ ambient temp.= 60A Non-repetitive Peak Cathode Current = 800A Peak Controllable Current = 50A Gate-Anode Voltage(Continuous) = 20V Gate-Anode Voltage (Peak) = 25V Rate of Change of Current = 800A/ s Maximum Power Dissipation = 178W Linear Derating Factor = 1.43W/0C Operating and Storage Temperature = -55 to 1500C

Features: High Surge Current capability High di/dt capability >6KV ESD Gate protection MOS insulated gate control Gate turn off capability at high temperatures