P1003EVG

P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS -30V RDS(ON) 10.5m @VGS = -10V ID -13A

SOP- 08

ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation
1

SYMBOL VDS VGS

LIMITS -30 25 -13 -9 -50 -49 120 2.5 1.6 -55 to 150

UNITS V

TA = 25 C TA = 70 C

ID IDM IAS

L = 0.1mH TA = 25 C TA = 70 C

EAS PD TJ, TSTG

mJ W C

Operating Junction & Storage Temperature Range

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1

SYMBOL RJC RJA

TYPICAL

MAXIMUM 25 50

UNITS C / W

Pulse width limited by maximum junction temperature.

Ver 1.0

2011/4/20

P1003EVG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise Noted)
PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
2 1

LIMITS MIN -30 -1.0 -1.5 -3 100 -1 -10 -50 13 10.5 9 29 4200 16 12 10.5 TYP MAX

UNIT

V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS VSD

VGS = 0V, ID = -250A VDS = VGS, ID = -250A VDS = 0V, VGS = 25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V , TJ = 125 C VDS = -5V, VGS = -10V VGS = -4.5V, ID = -10A VGS = -6.5V, ID = -13A VGS = -10V, ID = -13A VDS = -10V, ID = -13A DYNAMIC VGS = 0V, VDS = -15V, f = 1MHz

V nA A A m S

1218 504 42 12.6 15.4 16.8 22.4 70 140 -2.1

pF

Gate-Source Charge2 Gate-Drain Charge Rise Time Fall Time2 Continuous Current Forward Voltage
1 2 1 2 2 2

VDS = 0.5V(BR)DSS, VGS = -10V, ID = -13A

nC

Turn-On Delay Time2 Turn-Off Delay Time

VDS = -15V, ID -1A, VGS = -10V, RGS = 6

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 C) A V IF = IS, VGS = 0V -1.2

Pulse test : Pulse Width 300 sec, Duty Cycle 2. Independent of operating temperature.

Ver 1.0

2011/4/20

P1003EVG
P-Channel Enhancement Mode MOSFET

Ver 1.0

2011/4/20

P1003EVG
P-Channel Enhancement Mode MOSFET

Ver 1.0

2011/4/20