SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE

ISSUE 2 - OCTOBER 1995

FMMD914
2

DIODE PIN CONNECTION



PARTMARKING DETAIL 5D

1 3

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER Working Peak Reverse Voltage Average Rectified Forward Current at Tamb=25C Repetitive Peak Forward Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VRWM IF(AV) IFRM Ptot Tj:Tstg VALUE 75 75 225 330 -55 to +150 UNIT V mA mA mW C

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

PARAMETER SYMBOL MIN. 75 1 25 50 8 4 Total Capacitance Forward Recovery Voltage Rectification Efficiency CT VFM(REC)
r

MAX.

UNIT CONDITIONS. V V
A

Reverse Breakdown Voltage VBR Forward Voltage Static Reverse Current Reverse Recovery Time VF IR trr

IR=100 A IF=10mA VR=20V VR=20V, Tamb=150 C IF= IRM=10mA,IRR =1mA RL=100 IF=10mA,IRR =1mA, VR=6V RL=100 VR=0, f=1MHz IF=50mA, RL=50 VR=2V,RL=5k , CL=20pF Zsource=50 , f=100MHz

nA ns

ns pF V %

4 2.5 45

Spice parameter data is available upon request for this device

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