MOSIS PARAMETRIC TEST RESULTS

RUN: T24J (MM_EPI)

TECHNOLOGY: SCN025

VENDOR: TSMC
FEATURE SIZE: 0.25 microns

INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: TSMC 0251P5M
TRANSISTOR PARAMETERS

W/L

MINIMUM
Vth

0.36/0.24

SHORT
Idss
Vth
Vpt

20.0/0.24

WIDE
Ids0

20.0/0.24

LARGE
Vth
Vjbkd
Ijlk
Gamma

50/50

K' (Uo*Cox/2)
Low-field Mobility

N-CHANNEL P-CHANNEL UNITS

0.50

-0.47 volts

576
0.51
7.6

-263
uA/um
-0.51 volts
-7.2 volts

6.0

-2.9

pA/um

0.43
6.1
<50.0
0.44

-0.56
-7.0
<50.0
0.59

volts
volts
pA
V^0.5

123.3
399.92

-24.8 uA/V^2
80.44 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask and
etch bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology
XL
XW
----------------------- -----SCN5M_DEEP (lambda=0.12)
0.03
-0.04
thick oxide, NMOS
0.02
-0.04
thick oxide, PMOS
-0.03
-0.04
TSMC25
0.03
0.00
thick oxide, NMOS
0.03
0.00
thick oxide, PMOS
0.03
0.00
SCN5M_SUBM (lambda=0.15)
-0.03
0.00
thick oxide, NMOS
0.02
0.00
thick oxide, PMOS
-0.03
0.00
FOX TRANSISTORS
Vth

GATE
Poly

N+ACTIVE P+ACTIVE UNITS

>6.6
<-6.6 volts

PROCESS PARAMETERS
N+ACTV P+ACTV POLY N+BLK PLY+BLK MTL1 MTL2 UNITS
Sheet Resistance
4.4
3.5 4.0
58.2 176.7 0.07 0.07 ohms/sq
Contact Resistance
5.8
5.1 5.0
2.95 ohms
Gate Oxide Thickness 56
angstrom
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance

MTL3
0.07
5.55

MTL4
0.07
7.87

MTL5
0.03
9.92

N_WELL
1091

UNITS
ohms/sq
ohms

COMMENTS: BLK is silicide block.

CAPACITANCE PARAMETERS
Area (substrate)
Area (N+active)
Area (P+active)
Area (poly)
Area (metal1)
Area (metal2)
Area (metal3)
Area (metal4)
Area (no well)
Fringe (substrate)
Fringe (poly)
Fringe (metal1)
Fringe (metal2)
Fringe (metal3)
Fringe (metal4)
Overlap (N+active)
Overlap (P+active)

N+ACTV P+ACTV POLY M1

1749
1892
99 35
6162 48
5906
54

255
401

CIRCUIT PARAMETERS
Inverters
Vinv
Vinv
Vol (100 uA)
Voh (100 uA)
Vinv
Gain
Ring Oscillator Freq.
D1024_THK (31-stg,3.3V)
DIV1024 (31-stg,2.5V)
Ring Oscillator Power
D1024_THK (31-stg,3.3V)
DIV1024 (31-stg,2.5V)
COMMENTS: DEEP_SUBMICRON

347

M2 M3 M4 M5 M4P N_WELL UNITS

18 12 8 7
62
aF/um^2
20 14 11 10
aF/um^2
aF/um^2
17 11 8 6
aF/um^2
41 16 11 7
aF/um^2
44 17 10
aF/um^2
45 17
aF/um^2
46 978
aF/um^2
aF/um^2
-- 55 51 38 27
aF/um
67 42 32 25 22
aF/um
51 37
25
aF/um
55 38 31
aF/um
54 42
aF/um
68
aF/um
573
aF/um
661
aF/um

UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0

1.02
1.10
0.20
2.08
1.16
-18.10

volts
volts
volts
volts
volts

235.13 MHz
258.49 MHz
0.12 uW/MHz/gate
0.06 uW/MHz/gate

T24J SPICE BSIM3 VERSION 3.1 PARAMETERS

SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: Jun 10/02
* LOT: T24J
WAF:
* Temperature_parameters=Default
.MODEL CMOSN NMOS (
+VERSION = 3.1
TNOM
+XJ
= 1E-7
NCH
+K1
= 0.448342
K2
+K3B
= 3.2767535
W0
+DVT0W = 0
DVT1W
+DVT0
= 0.3601764
DVT1
+U0
= 306.2105043
UA
+UC
= 3.70815E-11
VSAT
+AGS
= 0.3393546
B0
+KETA
= -3.966351E-3 A1
+RDSW
= 179.831734
PRWG
+WR
= 1
WINT
+XL
= 3E-8
XW
+DWB
= 3.240913E-9
VOFF
+CIT
= 0
CDSC
+CDSCB = 0
ETA0
+DSUB
= 0.0287979
PCLM
+PDIBLC2 = 2.898908E-3
PDIBLCB
+PSCBE1 = 7.990153E10
PSCBE2
+DELTA = 0.01
RSH
+PRT
= 0
UTE
+KT1L
= 0
KT2
+UB1
= -7.61E-18
UC1
+WL
= 0
WLN
+WWN
= 1
WWL
+LLN
= 1
LW
+LWL
= 0
CAPMOD
+CGDO
= 5.73E-10
CGSO
+CJ
= 1.749243E-3
PB
+CJSW
= 4.166444E-10 PBSW
+CJSWG = 3.29E-10
PBSWG
+CF
= 0
PVTH0
+PK2
= 1.238425E-3
WKETA
*
.MODEL CMOSP PMOS (
+VERSION = 3.1
TNOM
+XJ
= 1E-7
NCH
+K1
= 0.5979442
K2
+K3B
= 13.8694965
W0
+DVT0W = 0
DVT1W
+DVT0
= 2.6114988
DVT1
+U0
= 118.3899672
UA
+UC
= -1E-10
VSAT
+AGS
= 0.138836
B0
+KETA
= 0.0164434
A1
+RDSW
= 991.4259914
PRWG
+WR
= 1
WINT
+XL
= 3E-8
XW
+DWB
= 1.23372E-8
VOFF
+CIT
= 0
CDSC
+CDSCB = 0
ETA0
+DSUB
= 0.9025044
PCLM

2012
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

27
2.3549E17
5.929784E-3
1E-7
0
0.4798196
-1.12881E-9
1.635085E5
-4.375283E-8
4.018353E-4
0.5
0
-4E-8
-0.0974614
2.4E-4
4.875988E-3
1.8525545
-0.050769
5.163298E-10
4.4
-1.5
0.022
-5.6E-11
1
0
0
2
5.73E-10
0.99
0.99
0.99
-0.01
9.917607E-3

LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

49
5.6E-9
0.381362
1E-3
2.478383E-7
0
-0.5
2.351349E-18
1.8686781
4.903443E-7
0.378476
-0.2
0
-2.586891E-8
1.8219843
0
3.92741E-4
0.9990679
0.8924914
0.0099982
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-12
0.458011
0.3424721
0.3424721
-10
-7.394384E-3

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

27
4.1589E17
7.343447E-3
1E-6
0
0.6881792
1.569579E-9
2E5
1.569804E-6
0
0.1639469
0
-4E-8
-0.1326985
2.4E-4
0.3344081
1.097713

LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

49
5.6E-9
-0.5674034
0
1E-9
0
-0.1155068
1E-21
0.8547304
5E-6
0.3605999
-0.3373371
3.205759E-8
-5.418362E-8
1.1503468
0
-0.0985916
3.842508E-4

+PDIBLC2
+PSCBE1
+DELTA
+PRT
+KT1L
+UB1
+WL
+WWN
+LLN
+LWL
+CGDO
+CJ
+CJSW
+CJSWG
+CF
+PK2
*

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

6.021018E-3
2.587374E10
0.01
0
0
-7.61E-18
0
1
1
0
6.61E-10
1.894379E-3
3.452765E-10
2.5E-10
0
3.556973E-3

PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
PVTH0
WKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

-9.645765E-4
6.600691E-9
3.5
-1.5
0.022
-5.6E-11
1
0
0
2
6.61E-10
0.99
0.5892224
0.5892224
5.755321E-3
0.0261299

DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

9.964722E-4
0.0149447
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-12
0.4688436
0.2674658
0.2674658
-0.1748529
-9.970751E-3