Si2301DS

Vishay Siliconix

P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY
VDS (V)
- 20

rDS(on) (W)
0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V

ID (A)
- 2.3 - 1.9

TO-236 (SOT-23)

1 3 D Ordering Information: Si2301DS-T1

Top View Si2301DS (A1)* *Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

Limit
- 20 "8 - 2.3 - 1.5 - 10 - 1.6 1.25 0.8 - 55 to 150

Unit
V

W _C

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990Rev. E, 13-Oct-03 www.vishay.com RthJA

Symbol

Limit
100 166

Unit
_C/W

Si2301DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = - 250 mA VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55_C VDS v - 5 V, VGS = - 4.5 V VDS v - 5 V, VGS = - 2.5 V VGS = - 4.5 V, ID = - 2.8 A VGS = - 2.5 V, ID = - 2.0 A VDS = - 5 V, ID = - 2.8 A IS = - 1.6 A, VGS = 0 V -6 -3 0.105 0.145 6.5 - 0.80 - 1.2 0.130 0.190 - 20 - 0.45 "100 -1 - 10 V nA mA

Symbol

Test Conditions

Min

Typ

Max

Unit

On State Drain Currenta On-State

ID(on) D( )

Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage

rDS(on) DS( ) gfs VSD

W S V

Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = - 6 V, VGS = 0, f = 1 MHz VDS = - 6 V, VGS = - 4.5 V ID ^ - 2.8 A 5.8 0.85 1.70 415 223 87 pF 10 nC

Switchingc
Turn On Time Turn-On td(on) tr td(off) tf VDD = - 6 V, RL = 6 W ID ^ - 1.0 10A A, VGEN = - 4.5 45V RG = 6 W 13.0 36.0 42 34 25 60 70 60 ns

Turn-Off Time

Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature.

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Document Number: 70627 S-31990Rev. E, 13-Oct-03

Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10

Output Characteristics
VGS = 5, 4.5, 4, 3.5, 3 V

10 2.5 V I D - Drain Current (A)

Transfer Characteristics

8 I D - Drain Current (A)

TC = - 55_C

6 2V

25_C 125_C

0, 0.5, 1 V

1.5 V

0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)

0 0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS - Gate-to-Source Voltage (V)

0.6 0.5 r DS(on)- On-Resistance ( W ) 0.4 0.3

On-Resistance vs. Drain Current

1000

Capacitance

800 C - Capacitance (pF)

600 Ciss 400 Coss 200 Crss

VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 0.0 0 2 4 6 8 10 ID - Drain Current (A)

0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V)

5 VDS = 6 V ID = 2.8 A V GS - Gate-to-Source Voltage (V) 4

Gate Charge

1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 - 50

On-Resistance vs. Junction Temperature

VGS = 4.5 V ID = 2.8 A

0 0 2 4 6 8

50

100

150

Qg - Total Gate Charge (nC)

TJ - Junction Temperature (_C)

Document Number: 70627 S-31990Rev. E, 13-Oct-03

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Si2301DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10

Source-Drain Diode Forward Voltage

0.6 0.5 r DS(on)- On-Resistance ( W )

On-Resistance vs. Gate-to-Source Voltage

I S - Source Current (A)

TJ = 150_C

0.4 0.3 0.2 0.1 0.0

ID = 2.8 A

TJ = 25_C

1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

0.4 0.3 VGS(th) Variance (V) 0.2 0.1 0.0 - 0.1 - 0.2 - 50

Threshold Voltage

14 12 10 Power (W) 8 6 4 2 0

Single Pulse Power

ID = 250 mA

TC = 25_C Single Pulse

50 TJ - Temperature (_C)

100

150

0.01

0.10

1.00 Time (sec)

10.00

2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.2 0.1 0.05 0.02 Single Pulse 10 -3 10 -2 10 -1 1 10 30

0.1

0.01 10 -4

Square Wave Pulse Duration (sec)

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Document Number: 70627 S-31990Rev. E, 13-Oct-03

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