Cc ch hot ng

Mch khuch i ch A Trong mch khuch i ch A, c dng chy trong mch ra trong c chu k tn hiu. Kiu mch khuch i ny i hi hot ng trong min tuyn tnh. Khi tn hiu vo thay i khin dng base thay i, v nu s thay i ny nh gi im lm vic trong min tuyn tnh th tn hiu ra s c dng nh tn hiu vo. Dng collector s chy trong c chu k ca tn hiu v gi tr trung bnh ca n bng vi gi tr tnh. Hnh B29.1 ch ra cc ng c tuyn in hnh cho mch khuch i s dng Transistor ch A: ng cong c tuyn ra, ng ti, tn hiu vo (dng ib) ; tn hiu ra (in p ra vce ). Cng sut. tm cc gi tr cng sut tiu th trong ch A, gi thit mch khuch i hnh B29.2 c in p tnh VCEQ = Vcc/2 , tng ng vi dng ICQ = Vcc*RL/2 . 1. Cng sut hu ch Pu : vi tn hiu vo hnh sin, in p trn ti R L l: VRL = Vs*sin(w.t) Cng sut tiu hao trn ti R L bng vi gi tr trung bnh ca cng sut tc thi vs(t)*is(t) :
PRL = Vcc2 Vs 2 = 4 *RL 2 *RL

Ch xem xt thnh phn cng sut lin quan ti tn hiu , ta c: Pu = Vs2 / 2*RL . 2. Cng sut Pcc cung cp bi ngun dc.
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Cc ch hot ng

y l gi tr cng sut trung bnh (Vcc*i S) c cung cp bi ngun dc v bng vi: Pcc = Vcc2 /2*RL . 3. Cng sut tiu hao trn T : y l gi tr cng sut tiu hao trung bnh trn T [vce(t)*is(t)]: PD = Vcc2 /4*RL VS2 /2*RL . Nh ta thy, PD s nh nht nu bin tn hiu l ln nht.

Hiu sut. Hiu sut c nh ngha l cng sut hu ch trn ti (Pu) v cng sut cung cp bi ngun (Pcc). C = Pu/Pcc = VS2 / Vcc2 . T y, c th nhn thy l hiu sut s ln nht khi Vs t gi tr max. Theo l thuyt, Vsmax = Vcc/2 ; v trong iu kin l tng hiu sut ln nht t 25%. Thc t, hiu sut ca mch khuch i ch A ch t khong 20%. Mch khuch i ch A t hiu sut cao hn (max=50%) nu ti c ghp bin p. Mch khuch i ch B. Hiu sut thp ca mch khuch i ch A pht sinh t thc t l ngay c khi khng c tn hiu vo, Transistor vn tiu th cng sut. Gii php cho vn ny l c nh im Q gn vi min ngt. Trong trng hp ny, nu khng c tn hiu vo, dng collector l rt thp. Tuy nhin, khi c tn hiu vo, ch c dng ra trong na chu k dng ca tn hiu vo. Mi na chu k m ca tn hiu vo m thp hn gi tr ngt cut-off , s ngn dng collector. Hnh B30.1 ch ra v d ca b khuch i tn hiu ac ch B.
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Cc ch hot ng

Vi tn hiu ac, dng collector ch chy trong na chu k tn hiu c ngha 1800 . Gc ny c gi l gc dn. c c tn hiu ra lp li dng ca tn hiu vo, s cn n 2 linh kin tch cc cng hot ng trong ch B. Mi mt linh kin s khuch i tn hiu trong 1/2 chu k. C 3 kiu mch thc hin nguyn tc ny: Mch y ko push-pull. Mch kt cui n (single - ended). Mch y ko - i xng b (complementary symmetry). Mch khuch i kt cui n vi 2 ngun cung cp. Mt mch kt cui n c cho hnh B30.2 Trong ch tnh, 2 Transistor ngt v im chung A ca chng c ni t. Khng c dng chy qua ti. Trong ch ng, T1 s dn trong 1/2 chu k dng v c dng chy t tri sang phi trn ti. Trong na chu k m, T2 dn v c dng chy trn ti theo hng ngc li. Nh vy, to li trung thc mt tn hiu, cn thit a vo base ca 2 Transistor hai tn hiu ngc pha nhau. Khi xc nh linh kin, nh rng, in p ri trn Transistor ngt l gp 2 ln Vcc (in p st trn Transistor dn l bng 0V). Nh vy, s phi la chn Transistor c BV CE0 > 2Vcc (vi BVCE0 l gi tr in p nh thng ca Transistor). Ch rng, v T1 hot ng nh mch khuch i lp emitter trong khi T2 hot ng nh mch CE, nn hai na sng trn ti s khng c cng bin . T1 hot ng nh mch CE, cn cung cp tn hiu vo gia base v emitter . iu ny thc hin c bi vic ghp bin p nh hnh B30.3. Mch khuch i kt cui n vi 1 ngun cung cp

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Cc ch hot ng

s dng ch 1 ngun cung cp nh hnh B30.4 th ti s phi c ni ti mt t in c gi tr cao (khong vi trm F). Trong trng hp ny, in p trn t s l hng s trong sut chu k hot ng, ging nh mt ngun cung cp th 2. Nu 2 Transistor ging nhau, ti im chung A c in p Vcc/2 v t s duy tr in p ny. Nh vy, hot ng ca mch s ging nh trng hp 2 ngun cung cp. Khi T1 dn, in p cung cp cho mch s l hiu ca Vcc v in p trn t, tc l bng Vcc/2. Cn khi T2 dn, ch c ngun cung cp bi t l hot ng, tc cng bng Vcc/2. Mch khuch i y ko Mch khuch i y ko gm 2

Transistor NPN m kt ni i xng

vi nhau v c im E chung nh hnh B30.5. Ti u ra ca 2 tng, c 1 bin p vi im gia u ngun. V 2 Transistor l cng loi, mi dng collector ch chy trong mt na cun dy ca bin p, chng s c hng ngc nhau v s to 2 dng chy ngc chiu. Trong ch tnh, v c 2 Transistor hot ng ch B nn chng s ngt. Trong ch ng hay ch ac, gi thit mi T s thay phin dn trong mi na chu k ca tn hiu. V 2 na sng trn cun th cp l ngc chiu nhau, dng sng sin hon chnh s c to li trn ti. Mch y ko s dng 2 Transistor dn lun phin. Mt bin p vo c im gia ni t c nhim v a n base ca 2 Transistor hai tn hiu bng nhau nhng ngc pha. Mt cch khc l dng mch o pha ging nh trng hp ca mch khuch i ti kp. iu ny s ci thin p ng tn s hn vic s dng bin p. Cc cng thc tnh cng sut. 1. Cng sut hu ch Pu:
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Cc ch hot ng

Gi thit in p trn ti c gi tr nh l V M , cng sut tiu th hu ch trn ti l: Pu = VM2 / 2RL . 2. Cng sut cung cp bi ngun Pcc. y l gi tr trung bnh ca cng sut cung cp bi ngun dc: Pcc = 2*Vcc*VM/(*RL). t , ta thy rng Pcc l max khi V M t max c ngha bng Vcc. Lc ny: Pcc = 2*Vcc2 / (RL). 3. Cng sut tiu hao trn T. y l gi tr trung bnh ca cng sut tiu hao trn mi T:
PD = Vcc * VM V M * RL 4 * RL
2

PD s ln nht khi VM = 2*Vcc/ . Lc ny: PDMAX = Vcc2/(2*RL). v t xp x Pumax/5. 4. Hiu sut: c nh ngha nh l t s gia cng sut hu ch trn ti Pu v cng sut cung cp bi ngun dc Pcc. = Pu/Pcc = *VM/(4*Vcc). t cng thc ny, ta thy rng hiu sut l mt hm tuyn tnh ca VM t max khi VM = Vcc . Lc ny, MAX = /4 = 78,5%. Hiu sut thc t ca mch khuch i ch B l khong 70%.

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Cc ch hot ng

Mo qua im 0 Chuyn tip base-emitter s khng khuch i tn hiu c bin nh hn mc ngng ca min ngt. Hnh B30.6 ch ra c tuyn truyn t ca mch khuch i s dng 2 BJT. T ng c tuyn ny, c th thy rng tn hiu s mo khi n i qua 0. Kiu mo ny c gi l mo qua im 0 cross-over. khc phc, BJT s c phn cc c im lm vic ngay ti mc ngng ca min ngt. Ch phn cc ny gi l ch AB. Mch khuch i y ko, i xng b (ngc). S khi in hnh ca cc mch khuch i y ko, i xng b c ch ra hnh B31.1.

2 Transistor

khc loi (1

loi NPN v 1 loi PNP) v c hai c mc theo kiu lp E. Tr ti c iu khin bi T1 trong na chu k dng v bi T2 trong na chu k m (hnh B31.2a v B31.2 b) Nh rng tn hiu vo v ra ca mch khuch i l cng pha; cng s c mo qua im 0 ng k vi mch ny. Mo qua im 0 l do 2 transistor T1 v T2 ch dn khi in p V BE ca

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Cc ch hot ng

chng t ti ngng dn (khong 0,7V). Ngc li chng s ngt khi VBE ri xung thp hn 0,7V. hn ch mo qua im 0, cn mt mch thin p cho base khin 2 Transistor dn t ngay c khi khng c tn hiu vo. Hnh B31.3 ch ra mch thin p gim mo qua im 0. in p VBE trn 2 Transistor c gi mc 0,7V (mc ngng) bi diode D1 v D2 m s lun phn cc thun nh R1 v R2.

S dng ngun cung cp n. Ging nh mch kt cui n bn trn, mch i xng ngc cng c th ch dng mt ngun cung cp bi vic ni ti vi mt t in c tr s ln nh

Mch khuch i ch C. Trong c thin p mch trong

khuch i lp C, T s min ngt. Vi tn hiu vo hnh sin, tn hiu ra s l cc xung vi rng nh

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Cc ch hot ng

hn 1/2 chu k nh hnh B32.1. Mo trong trng hp ny l rt ln. Hot ng ca mch khuch i ch C khng tuyn tnh. Mch khuch i lp C thng s dng kt hp vi ti cng hng v ch yu khuch i cng sut tn s cao. Hot ng Khi tn hiu sin v(t) = VM*sin (wt) , c a ti u vo mch khuch i, dng i(t) qua ti RL s khc 0 trong khong thi gian dn T = t2 t1 tng ng vi gc dn = 2 - 1 vi = *T. Trong mch khuch i lp A gc: <1800 v ph thuc vo ch phn p ca Transistor. Mch khuch i ny khng tiu hao cng sut trong ch tnh (ICQ= 0) trong khi cng sut tiu hao ti ch ng ph thuc vo bin ca tn hiu vo v(t) v gc dn. V l do , hiu sut ca mch ch C l hm ca gc dn. Khi gim gc dn ny, hiu sut tng v c th t ti 100%. Thc t khng th gim gc dn nhiu v cng sut tng s gim theo. Cc xung ca dng i(t) l mt hm tun hon, chu k ca hm bng vi chu k tn hiu vo. S dng chui Furier, dng ti c th c biu din bi tng ca cc sng sin: i(t) = ICQ +i1*sin(wt) +i2*sin(2wt) + Nu s dng ti l mt mch cng hng iu chnh c tn s th mch khuch i ny c th ng dng lm b nhn tn. Tuy nhin, do bin ca cc hi bc cao l nh nn ng dng khuch i ch yu ti tn s c bn f=w/2. Mt b khuch i lp C hot ng ti tn s cao, nhng ch dng khuch i 1 tn s, n khng th dng cho cc ng dng khuch i i hi tuyn tnh.

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