Sei sulla pagina 1di 4

2SK3728-01MR

2SK3728-01MR FUJI POWER MOSFET 200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features High speed switching

FUJI POWER MOSFET

200305

N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series

Features200305 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series High speed switching Low on-resistance No secondary breadown

High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

ApplicationsNo secondary breadown Low driving power Avalanche-proof Switching regulators UPS (Uninterruptible Power Supply)

Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

(Tc=25°C unless otherwise specified)UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings

Maximum ratings and characteristicAbsolute maximum ratings

Item

Symbol

Ratings

Unit

Drain-source

voltage

VDS

900

V

 

VDSX

*5

900

V

Continuous drain current

ID

±2.2

A

Pulsed drain current

ID(puls]

±8.8

A

Gate-source voltage

VGS

±30

V

Repetitive or non-repetitive

IAR

*2

2.2

A

Maximum Avalanche Energy

EAS

*1

127.2

mJ

Maximum Drain-Source dV/dt

dVDS/dt *4

40

kV/µs

Peak Diode Recovery dV/dt

dV/dt

*3

5

kV/µs

Max. power dissipation

PD

Ta=25 °C

2.16

W

Tc=25 °C

26

Operating and storage temperature range

Tch

+150

°C

Tstg

-55 to +150

°C

Isolation Voltage

VISO

*6

2000

Vrms

*1 L=48.2mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph

*3

IF

<

=

-ID, -di/dt=50A/µs, Vcc

<

=

BVDSS, Tch

<

=

150°C

*4 VDS

<

=

900V

*2 Tch 150°C

<

=

*5 VGS=-30V

Outline Drawings [mm]150°C *4 VDS < = 900V *2 Tch 150°C < = *5 VGS=-30V TO-220F Equivalent circuit

TO-220F

Tch 150°C < = *5 VGS=-30V Outline Drawings [mm] TO-220F Equivalent circuit schematic Drain(D) Gate(G) Source(S)

Equivalent circuit schematicTch 150°C < = *5 VGS=-30V Outline Drawings [mm] TO-220F Drain(D) Gate(G) Source(S) *6 f=60Hz, t=6-sec.

Drain(D) Gate(G) Source(S)
Drain(D)
Gate(G)
Source(S)

*6 f=60Hz, t=6-sec.

Electrical characteristics (Tc =25°C unless otherwise specified) c =25°C unless otherwise specified)

Item

Symbol

Test

Conditions

Min.

Typ.

Max.

Units

Drain-source breakdown voltaget

V(BR)DSS

ID= 250 µ A

VGS=0V

 

900

   

V

Gate threshold voltage

VGS(th)

ID= 250 µ A

VDS=VGS

 

3.0

 

5.0

V

   

VDS=900V VGS=0V

Tch=25°C

   

25

µA

Zero gate voltage drain current

IDSS

VDS=720V VGS=0V

Tch=125°C

   

250

Gate-source leakage current

IGSS

VGS=±30V

VDS=0V

     

100

nA

Drain-source on-state resistance

RDS(on)

ID=1.1A

VGS=10V

   

6.15

8.00

Forward transcondutance

gfs

ID=1.1A

VDS=25V

 

1.1

2.2

 

S

Input capacitance

Ciss

VDS=25V

 

250

375

pF

Output capacitance

Coss

VGS=0V

 

36

55

Reverse transfer capacitance

Crss

f=1MHz

 

2.2

3.3

Turn-on time ton

td(on)

VCC=600V ID=1.1A

   

17

26

ns

tr

VGS=10V

 

6

9

Turn-off time toff

td(off)

RGS=10

 

26

39

tf

 

28

42

Total Gate Charge

QG

VCC=450V

 

8.3

12.5

nC

Gate-Source Charge

QGS

ID=2.2A

 

3.4

5.1

Gate-Drain Charge

QGD

VGS=10V

 

2.2

3.3

Avalanche capability

IAV

L=48.2mH Tch=25°C

 

2.2

   

A

Diode forward on-voltage

VSD

IF=2.2A

VGS=0V

Tch=25°C

 

0.90

1.50

V

Reverse recovery time

trr

IF=2.2A

VGS=0V

 

0.8

 

µs

Reverse recovery charge

Qrr

-di/dt=100A/µs

Tch=25°C

 

2.2

 

µC

Thermalcharacteristics 

 

Item

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal

resistance

Rth(ch-c)

channel to case

   

4.808

°C/W

           
 

Rth(ch-a)

channel

to ambient

     

58.0

°C/W

2SK3728-01MR

FUJI POWER MOSFET

2SK3728-01MR FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 30 25 20 15 10 5 0

Characteristics

Allowable Power Dissipation

PD=f(Tc) 30 25 20 15 10 5 0 0 25 50 75 100 125 150
PD=f(Tc)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
PD [W]

Tc [°C]

Typical Transfer Characteristic

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C 10 1 0.1 0 1 2 3 4 5 6 7
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
10
1
0.1
0
1
2
3
4
5
6
7
8
9
10
ID[A]

VGS[V]

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25°C 8.5 VGS=5.5V 6.0V 6.5V 8.0 7.0V 10V 20V 7.5 7.0 6.5
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
8.5
VGS=5.5V
6.0V
6.5V
8.0
7.0V
10V
20V
7.5
7.0
6.5
6.0
5.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) [
]Ω

ID [A]

Typical Output Characteristics ID=f(VDS):80 µs pulse test,Tch=25°C

20V 10V 7.0V 2.5 6.5V 2.0 6.0V 1.5 1.0 VGS=5.5V 0.5 0.0 0 5 10
20V
10V
7.0V
2.5
6.5V
2.0
6.0V
1.5
1.0
VGS=5.5V
0.5
0.0
0
5
10
15
20
ID [A]

VDS [V]

Typical Transconductance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C 10 1 0.1 1 10 gfs [S]
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
10
1
0.1
1
10
gfs [S]

ID [A]

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=1.1A,VGS=10V 25.0 22.5 20.0 17.5 15.0 12.5 max. 10.0 7.5 typ. 5.0 2.5 0.0 -50
RDS(on)=f(Tch):ID=1.1A,VGS=10V
25.0
22.5
20.0
17.5
15.0
12.5
max.
10.0
7.5
typ.
5.0
2.5
0.0
-50
-25
0
25
50
75
100
125
150
Tch [°C]
RDS(on) [
]Ω

2SK3728-01MR

FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch

VGS(th)=f(Tch):VDS=VGS,ID=250µA 7.0 6.5 6.0 5.5 5.0 max. 4.5 4.0 3.5 min. 3.0 2.5 2.0 1.5
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
min.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
VGS(th) [V]

Tch [°C]

Typical Capacitance

C=f(VDS):VGS=0V,f=1MHz

0 10 Ciss -1 10 Coss -2 10 Crss -3 10 10 0 10 1
0
10
Ciss
-1
10
Coss
-2
10
Crss
-3
10
10 0
10 1
10 2
C [nF]

VDS [V]

Typical Switching Characteristics vs. ID

Typical Gate Charge Characteristics

VGS=f(Qg):ID=2.2A,Tch=25°C 14 12 Vcc= 180V 450V 720V 10 8 6 4 2 0 0 2
VGS=f(Qg):ID=2.2A,Tch=25°C
14
12
Vcc=
180V
450V
720V
10
8
6
4
2
0
0
2
4
6
8
10
12
14
VGS [V]

Qg [nC]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 µs pulse test,Tch=25°C 10 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 IF
IF=f(VSD):80 µs pulse test,Tch=25°C
10
1
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
IF [A]

VSD [V]

Maximum Avalanche Energy vs. starting Tch

t=f(ID):Vcc=600V,VGS=10V,RG=10Ω E(AS)=f(starting Tch):Vcc=90V 3 10 300 I AS =1.0A 250 tf I AS =1.4A 2
t=f(ID):Vcc=600V,VGS=10V,RG=10Ω
E(AS)=f(starting Tch):Vcc=90V
3
10
300
I AS =1.0A
250
tf
I AS =1.4A
2
10
200
td(off)
150
I AS =2.2A
td(on)
1
10
100
tr
50
0
10
0
10 -1
10 0
0
25
50
75
100
125
150
ID [A]
starting Tch [°C]
t [ns]
E AS [mJ]

2SK3728-01MR

FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth I AV =f(t AV ):starting Tch=25°C,Vcc=90V 2 10 1 10 Single
Maximum Avalanche Current Pulsewidth
I AV =f(t AV ):starting Tch=25°C,Vcc=90V
2
10
1
10
Single
Pulse
0
10
-1
10
-2
10
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
t AV [sec]
Avalanche Current I AV [A]

Maximum Transient Thermal Impedance

Zth(ch-c)=f(t):D=0 2 10 1 10 0 10 -1 10 -2 10 10 -6 10 -5
Zth(ch-c)=f(t):D=0
2
10
1
10
0
10
-1
10
-2
10
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
Zth(ch-c) [°C/W]

t [sec]

http://www.fujielectric.co.jp/denshi/scd/