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Documenti di Professioni
Documenti di Cultura
2010
Consumer Memory
Product Guide
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
Apr. 2010
Product Guide
Consumer Memory
10
11
K 4 X X X X X X X X - X X X X
Speed
SAMSUNG Memory
DRAM
Package Type
Product
Revision
Organization
1. SAMSUNG Memory : K
Bank
7. Interface ( VDD, VDDQ)
2. DRAM : 4
3. Product
S
H
T
B
D
J
: SDRAM
: DDR SDRAM
: DDR2 SDRAM
: DDR3 SDRAM
: GDDR
: GDDR3
64 : 64Mb, 4K/64ms
28 : 128Mb, 4K/64ms
56 : 256Mb, 8K/64ms
51 : 512Mb, 8K/64ms
2G : 2Gb, 8K/64ms
8. Revision
1G : 1Gb, 8K/64ms
: 1st Gen.
: 9th Gen.
A
B
: 2nd Gen.
: 10th Gen.
: 3rd Gen.
: 11th Gen.
: 4th Gen.
: 12th Gen.
: 5th Gen.
: 13th Gen.
: 6th Gen.
: 14th Gen.
: 7th Gen.
: 15th Gen.
: 8th Gen.
: 19th Gen.
9. Package Type
10 : 1Gb, 8K/32ms
TSOPII (Lead-free)
100TQFP(Lead-free) only for 128Mb GDDR
: FBGA (Lead-free)
5. Organization
04 : x4
08 : x8
16 : x16
32 : x32
31 : x32 (2CS)
: 2 Banks
: 4 Banks
: 8 Banks
6. Bank
2
-2-
Apr. 2010
Product Guide
1
Consumer Memory
4
10
11
K 4 X X X X X X X X - X X X X
Speed
SAMSUNG Memory
DRAM
Package Type
Product
Revision
Organization
Bank
11. Speed
75 : 7.5ns, PC133 (133MHz CL=3)
60 : 6.0ns (166MHz CL=3)
50 : 5.0ns (200MHz CL=3)
40 : 4.0ns (250MHz CL=3)
B0 : DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
B3 : DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)
CC : DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
E6 : DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)
E7 : DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)
F7 : DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)
F8 : DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
H9 : DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)
K0 : DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)
7A : GDDR3-2.6Gbps (0.77ns)
08 : GDDR3-2.4Gbps (0.8ns)
1A : GDDR3-2.0Gbps (1.0ns)
12 : GDDR3-1.6Gbps (1.25ns)
14 : GDDR3-1.4Gbps (1.4ns)
-3-
Apr. 2010
Product Guide
Consumer Memory
Bank
64Mb N-die
4Banks
128Mb K-die
4Banks
128Mb O-die
4Banks
256Mb J-die
256Mb N-die
Part Number
4Banks
4Banks
Org.
K4S640832N
LC(L)75
8M x 8
K4S641632N
LC(L)50/C(L)60/C(L)75
4M x 16
K4S280832K
U*1C(L)75
16M x 8
K4S281632K
UC(L)50/C(L)60/C(L)75
8M x 16
K4S280832O
LC(L)75
16M x 8
K4S281632O
LC(L)50/C(L)60/C(L)75
8M x 16
K4S560432J
U*1C(L)75
64M x 4
K4S560832J
UC(L)75
32M x 8
K4S561632J
UC(L)60/C(L)75
16M x 16
K4S560432N
LC(L)75
64M x 4
K4S560832N
LC(L)75
32M x 8
K4S561632N
LC(L)60/C(L)75
16M x 16
Interface
Refresh
Power (V)
Package
Avail.
LVTTL
4K/64ms
3.30.3V
54pin TSOP(II)
Now
LVTTL
4K/64ms
3.30.3V
54pin TSOP(II)*1
Now
LVTTL
4K/64ms
3.30.3V
54pin TSOP(II)
3Q10
LVTTL
8K/64ms
3.30.3V
54pin TSOP(II)*1
Now
LVTTL
8K/64ms
3.30.3V
54pin TSOP(II)
Now
Package
Avail.
NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)
Bank
Part Number
64Mb N-die
4Banks
K4H641638N
Org.
Interface
Refresh
Power (V)
4M x 16
SSTL_2
4K/64m
2.50.2V
66pinTSOPII
60ball FBGA
Now
64Mb Q-die
4Banks
K4H641638Q
LC(L)CC
4M x 16
SSTL_2
4K/64m
2.50.2V
66pinTSOPII
2Q10
128Mb L-die
4Banks
K4H281638L
LC(L)/C(L)CC
8M x 16
SSTL_2
4K/64m
2.50.2V*1
66pinTSOPII
Now
128Mb O-die
4Banks
K4H281638O
LC(L)CC/C(L)B3
8M x 16
SSTL_2
4K/64m
2.50.2V*1
66pinTSOPII
2Q10
K4H560438J
LC(L)B3/C(L)B0
64M x 4
256Mb J-die
4Banks
K4H560838J
LC(L)CC/C(L)B3
32M x 8
SSTL_2
8K/64m
2.50.2V*2
66pinTSOPII
Now
K4H561638J
LC(L)CC/C(L)B3
16M x 16
K4H560438N
LC(L)B3/C(L)B0
64M x 4
K4H560838N
LC(L)CC/C(L)B3
32M x 8
SSTL_2
8K/64m
2.50.2V*2
66pinTSOPII
Now
LC(L)CC/C(L)B3
16M x 16
256Mb N-die
4Banks
K4H561638N
K4H510438F
512Mb F-die
4Banks
K4H510838F
K4H511638F
K4H510438G
512Mb G-die
4Banks
K4H510838G
K4H511638G
LC(L)B3/C(L)B0
HC(L)CC/C(L)B3
LC(L)CC/C(L)B3
HC(L)CC/C(L)B3
LC(L)CC/C(L)B3
HC(L)CC/C(L)B3
LC(L)B3/C(L)B0
HC(L)CC/C(L)B3
LC(L)CC/C(L)B3
HC(L)CC/C(L)B3
LC(L)CC/C(L)B3
HC(L)CC/C(L)B3
64M x 8
DDR500
DDR400
2.5V 0.125V
2.5V 0.2V
DDR400
DDR333/266
2.6V 0.1V
2.5V 0.2V
SSTL_2
8K/64m
2.50.2V*2
64M x 8
32M x 16
-4-
66pinTSOPII
60ball FBGA
Now
66pinTSOPII
60ball FBGA
66pinTSOPII
128M x 4
60ball FBGA
32M x 16
66pinTSOPII
128M x 4
60ball FBGA
SSTL_2
8K/64m
2.50.2V*2
66pinTSOPII
60ball FBGA
66pinTSOPII
60ball FBGA
Now
Apr. 2010
Product Guide
Consumer Memory
Banks
Part Number
128Mb O-die
4Banks
K4T28163QO
256Mb I-die
4Banks
256Mb N-die
4Banks
512Mb G-die
4Banks
512Mb I-die
4Banks
1Gb E-die
8Banks
1Gb F-die
8Banks
Org.
Interface
Refresh
Power (V)
Package
Avail.
HCF8/E7/F7/E6
8M x 16
SSTL_18
4K/64m
1.8V0.1V
84ball FBGA
Now
K4T56163QI
Z*1C(L)E7/F7/E6/D5/CC
16M x 16
SSTL_18
8K/64m
1.8V0.1V
84ball FBGA
Now
SSTL_18
8K/64m
1.8V0.1V
84ball FBGA
Now
K4T56163QN
HCF8/E7/F7/E6
16M x 16
K4T51083QG
HC(L)F8/E7/F7/E6
64M x 8
K4T51163QG
HC(L)F8/E7/F7/E6
32M x 16
K4T51043QI
HC(L)E7/F7/E6
128M x 4
K4T51083QI
HC(L)E7/F7/E6
64M x 8
K4T51163QI
HC(L)F8/E7/F7/E6
32M x 16
K4T1G084QE
HC(L)F8/E7/F7/E6
128M x 8
K4T1G164QE
HC(L)F8/E7/F7/E6
64M x 16
SSTL_18
8K/64m
1.8V0.1V
SSTL_18
8K/64m
1.8V0.1V
60ball FBGA
84ball FBGA
Now
60ball FBGA
Now
84ball FBGA
Now
60ball FBGA
SSTL_18
8K/64m
1.8V0.1V
SSTL_18
8K/64m
1.8V0.1V
Interface
Refresh
Power (V)
SSTL_15
8K/64m
1.5V0.075V
SSTL_15
8K/64m
1.5V0.075V
SSTL_15
8K/64m
1.5V0.075V
Org.
Interface
Refresh
Power (V)
PKG
Avail.
K4T1G084QF
BC(L)F8/E7/F7/E6
128M x 8
K4T1G164QF
BC(L)F8/E7/F7/E6
64M x 16
84ball FBGA
60ball FBGA
84ball FBGA
Now
Now
Banks
1Gb E-die
8Banks
2Gb B-die
8Banks
2Gb C-die
8Banks
Part Number
Org.
K4B1G0846E
HC(L)F7/F8/H9/K0
128M x 8
K4B1G1646E
HC(L)F7/F8/H9/K0
64M x 16
K4B2G0846B
HC(L)F7/F8/H9/K0
256M x 8
K4B2G1646B
HC(L)F7/F8/H9/K0
128M x 16
K4B2G0846C
HC(L)F8/H9/K0
256M x 8
K4B2G1646C
HC(L)F8/H9/K0
128M x 16
PKG
78ball FBGA
96ball FBGA
78ball FBGA
96ball FBGA
78ball FBGA
96ball FBGA
Avail.
Now
Now
Now
Density
Banks
1Gb E-die
8Banks
K4B1G1646E
HQH9
64M x 16
SSTL_15
8K/64m
1.5V0.075V
96ball FBGA
Now
2Gb C-die
8Banks
K4B2G1646C
HQH9
128M x 16
SSTL_15
8K/64m
1.5V0.075V
96ball FBGA
Now
NOTE : For more details about product specifications or technical files, please contact us "semiconductor@samsung.com"
-5-
Apr. 2010
Product Guide
Consumer Memory
Banks
Part Number
Org.
Interface
Refresh
Power (V)
4Banks
K4D263238K
VC40/50
Avail.
FC40/50
128Mb K-die
PKG
4M x 32
SSTL_2
4K/32m
2.5V5%
Lead-free
144ball FBGA
3Q. 10
EOL
U*1C40/50
100pin TQFP*1
NOTE : 1. 128Mb K-die GDDR TQFP supports Lead-free & Halogen-free package with Lead-free package code(-U)
Banks
Part Number
1Gb E-die
8Banks
K4J10324KE
Org.
Interface
Refresh
Power (V)
PKG
Avail.
32M x 32
SSTL_2
8K/32m
1.8V0.1V
136ball FBGA
Now
-6-
Apr. 2010
Product Guide
Consumer Memory
Bank
64Mb N-die
4Banks
Part Number
Org.
Interface
Refresh
Power (V)
Package
Avail.
4M x 16
LVTTL
4K/64ms
3.30.3V
54pin TSOP(II)
Now
KS641632N
LI(P)60/I(P)75
8M x 16
LVTTL
4K/64ms
3.30.3V
8M x 16
LVTTL
4K/64ms
3.30.3V
128Mb K-die
4Banks
K4S281632K
U*1I(P)60/I(P)75
128Mb O-die
4Banks
K4S281632O
LI(P)60/I(P)75
16M x 16
LVTTL
8K/64ms
3.30.3V
16M x 16
LVTTL
8K/64ms
3.30.3V
256Mb J-die
4Banks
K4S561632J
U*1I(P)60/I(P)75
256Mb N-die
4Banks
K4S561632N
LI(P)60/I(P)75
54pin
TSOP(II)*1
54pin TSOP(II)
54pin
TSOP(II)*1
Now
3Q 10
Now
54pin TSOP(II)
2Q 10
Package
Avail.
NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)
Bank
Part Number
K4H510838F
512Mb F-die
512Mb G-die
4Banks
4Banks
LI(P)B3
LI(P)B3
K4H511638F
HI(P)B3
LI(P)CC/B3
K4H511638G
HI(P)CC/B3
Org.
Interface
Refresh
Power (V)
8K/64m
2.50.2V*1
66pinTSOPII
64M x 8
32M x 16
SSTL_2
66pinTSOPII
Now
60ball FBGA
66pinTSOPII
32M x 16
SSTL_2
8K/64m
2.50.2V*1
Org.
Interface
Refresh
Power (V)
Package
Avail.
32M x 16
SSTL_18
8K/64m
1.8V0.1V
84ball FBGA
Now
32M x 16
SSTL_18
8K/64m
1.8V0.1V
84ball FBGA
Now
SSTL_18
8K/64m
1.8V 0.1V
60ball FBGA
Now
84ball FBGA
Now
SSTL_18
8K/64m
1.8V 0.1V
Interface
Refresh
Power (V)
60ball FBGA
Now
DDR400
DDR333/266
2.6V 0.1V
2.5V 0.2V
Bank
512Mb G-die
4Banks
512Mb I-die
4Banks
1Gb E-die
8Banks
1Gb F-die
8Banks
Part Number
K4T51163QG
HI(P)F7/I(P)E6/I(P)D5/
I(P)CC
K4T51163QG
HDE6
K4T51163QI
HI(P)E7/I(P)F7/I(P)E6
K4T51163QI
HDE7/E6
K4T1G084QE
HI(P)F7/I(P)E6
128M x 8
K4T1G164QE
HI(P)F7/I(P)E6
64M x 16
K4T1G084QF
BI(P)F7/I(P)E6
128M x 8
K4T1G164QF
BI(P)F7/I(P)E6
64M x 16
60ball FBGA
84ball FBGA
2Q 10
Density
Bank
Org.
1Gb E-die
8Banks
K4B1G1646E
HI(P)H9
64M x 16
SSTL_15
8K/64m
1.5V0.075V
96ball FBGA
Now
2Gb B-die
8Banks
K4B2G1646B
HI(P)H9
128M x 16
SSTL_15
8K/64m
1.5V0.075V
96ball FBGA
Now
2Gb C-die
8Banks
K4B2G1646C
HI(P)H9
128M x 16
SSTL_15
8K/64m
1.5V0.075V
96ball FBGA
2Q 10
-7-
Package
Avail.
Apr. 2010
Product Guide
Consumer Memory
4. Package Dimension
54Pin TSOP(II) (for SDRAM)
#27
(10.76)
(10)
(10)
(0.50)
(0.80)
(1.50)
0.075 MAX
0.
25
)
(R
(R
0.
25
)
+0.10
0.35 - 0.05
(4)
0.05 MIN
(R
(0.71)
0.
15
)
0.10 MAX
(10)
0.80TYP
[0.80 0.08]
0.45 ~ 0.75
0.125 - 0.035
1.20 MAX
(10)
0.1
5)
1.00 0.10
0.210 0.05
0.665 0.05
+0.075
22.22 0.10
(R
11.76 0.20
#1
(1.50)
(0.80)
#28
10.16 0.10
#54
(0.50)
Units : Millimeters
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASSY OUT QUALITY
0.25TYP
(0 8)
#33
(10.76)
(0.50)
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASSY OUT QUALITY
Detail A
0.
25
)
(4)
(R
0.075 MAX
0.
25
)
Detail B
(R
Detail A
0.05 MIN
0.
15
)
(0.71)
(10)
0.45 ~ 0.75
1.20 MAX
1.00 0.10
(10)
0.10 MAX
(R
(10)
(10)
(0.80)
(1.50)
0.210 0.05
(R
0.1
5)
0.125 - 0.035
0.665 0.05
+0.075
22.22 0.10
0.65TYP
[0.65 0.08]
11.76 0.20
#1
(1.50)
(0.80)
#34
10.16 0.10
#66
(0.50)
Units : Millimeters
0.25TYP
Detail B
(0 8)
0.25 0.08
0.30 0.08
-8-
Apr. 2010
Product Guide
Consumer Memory
#A1
Units : Millimeters
0.10 Max
8.00 0.10
8.0 0 0.10
#A1 MARK
0.80 x 8 = 6.40
0.80
9
1.60
7
(Datum A)
A
B
(Datum B)
12.00 0.10
E
F
0.50
G
H
12.00 0.10
1.00 x 11 = 11.00
J
1.00
K
L
M
0.32 0.05
1.10 0.10
TOP VIEW
BOTTOM VIEW
A B
Units : Millimeters
9.00 0.10
1.00MAX
0.80 x8 = 6.40
9.00 0.10
0.80 x4 = 3.20
#A1 MARK(option)
0.80 x2 = 1.60
5
0.80
A
B
0.50
F
G
0.50
H
0.45 0.05
J
K
L
M
60-0.45 0.05
0.20 M A B
1.20 MAX
(0.90)
(0.90)
(1.80)
(Datum A)
4-CORNER MARK(option)
TOP VIEW
BOTTOM VIEW
-9-
12.00 0.10
12.00 0.10
C
D
5.50
(Datum B)
1.00
#A1
Apr. 2010
Product Guide
Consumer Memory
Units : Millimeters
0.10MAX
# A1 INDEX MARK
7.50 0.10
7.50 0.10
MOLDING AREA
0.80 x 8 = 6.40
#A1
0.80
1.60
(Datum A)
9
(Datum B)
A
B
0.50 0.05
0.80
G
H
9.50 0.10
9.50 0.10
0.80 x 10 = 8.00
J
K
L
0.350.05
1.100.10
(0.95)
(1.90)
TOP VIEW
BOTTOM VIEW
0.10MAX
84Ball FBGA (For DDR2 128Mb O-die/256Mb N-die/512Mb G-die, I-die/1Gb E-die)
7.50 0.10
Units : Millimeters
7.50 0.10
0.80 x 8 = 6.40
#A1
0.80
9
(Datum A)
# A1 INDEX MARK
3.20
MOLDING AREA
1.60
6
B
3
A
B
(Datum B)
C
D
0.80
J
K
12.50 0.10
0.80 x 14 = 11.20
F
G
0.500.05
5.60
12.50 0.10
M
N
P
R
0.350.05
1.100.10
(0.95)
(1.90)
TOP VIEW
BOTTOM VIEW
- 10 -
Apr. 2010
Product Guide
Consumer Memory
Units : Millimeters
7.50 0.10
0.80 x 8 = 6. 40
7.50 0.10
# A1 INDEX MARK
3.20
(Datum A)
0.80
#A1
9
1.60
6
B
3
A
C
0.80 x 10 = 8.00
D
9.50 0.10
E
F
H
4.00
0.80
G
J
9.50 0.10
0.80
(Datum B)
K
L
0.370.05
1.100.10
(0.30)
60-0.48 Solder ball
(Post reflow 0.50 0.05)
(0.60)
0.2 M A B
TOP VIEW
MOLDING AREA
BOTTOM VIEW
Units : Millimeters
7.50 0.10
0.80 x 8 = 6. 40
7.50 0.10
# A1 INDEX MARK
3.20
0.80
#A1
9
(Datum A)
1.60
6
B
3
A
B
C
D
12.50 0.10
F
G
H
0.80
J
K
5.60
L
M
N
P
R
0.370.05
1.100.10
(0.30)
MOLDING AREA
84-0.48 Solder ball
(Post reflow 0.50 0.05)
0.2 M A B
TOP VIEW
- 11 -
(0.60)
BOTTOM VIEW
12.50 0.10
0.80 x 14 = 11.20
0.80
(Datum B)
Apr. 2010
Product Guide
Consumer Memory
Units : Millimeters
0.10MAX
9.00 0.10
9.00 0.10
0.80 x 8 = 6.40
3.20
0.80
#A1
9
(Datum A)
# A1 INDEX MARK
1.60
B
3
A
B
0.80
(Datum B)
C
D
0.80 x 14 = 11.20
13.00 0.10
F
G
H
0.80
J
K
5.60
13.00 0.10
M
N
P
R
0.35 0.05
1.10 0.10
(0.95)
84-0.45 Solder ball
(Post reflow 0.50 0.05)
0.2 M A B
TOP VIEW
MOLDING AREA
(1.90)
BOTTOM VIEW
7.50 0.10
0.80
(Datum A)
7.50 0.10
1.60
A
#A1 INDEX MARK
3.20
0.35 0.05
1.10 0.10
(0.95)
TOP VIEW
MOLDING AREA
(1.90)
BOTTOM VIEW
- 12 -
11.00 0.10
4.80
0.80
0.80
(Datum B)
A
B
C
D
E
F
G
H
J
K
L
M
N
0.80 x 12 = 9.60
9 8 7 6 5 4 3 2 1
11.00 0.10
#A1
Units : Millimeters
Apr. 2010
Product Guide
Consumer Memory
96Ball FBGA (for DDR3 1Gb x16 E-die / DDR3+ 1Gb x16 E-die / DDR3 2Gb x16 C-die)
7.50 0.10
0.10MAX
#A1
Units : Millimeters
0.80
7.50 0.10
A
#A1 INDEX MARK
1.60
3.20
B
9 8 7 6 5 4 3 2 1
0.35 0.05
1.10 0.10
MOLDING AREA
(1.90)
0.2 M A B
BOTTOM VIEW
Units : Millimeters
0.10MAX
9.00 0.10
0.80 x 8 = 6.40
0.80
(Datum A)
9.00 0.10
1.60
3.20
0.35 0.05
1.10 0.10
(0.95)
TOP VIEW
MOLDING AREA
(1.90)
BOTTOM VIEW
- 13 -
11.50 0.10
4.80
0.80
0.80
(Datum B)
A
B
C
D
E
F
G
H
J
K
L
M
N
0.80 x 12 = 9.60
9 8 7 6 5 4 3 2 1
11.50 0.10
#A1
13.30 0.10
(0.95)
TOP VIEW
0.80 x 15 = 12.00
0.40
0.80
13.30 0.10
(Datum B)
6.00
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
(Datum A)
Apr. 2010
Product Guide
Consumer Memory
Units : Millimeters
0.10MAX
9.00 0.10
#A1
0.80 x 8 = 6.40
9.00 0.10
3.20
B
9 8 7 6 5 4 3 2 1
0.35 0.05
1.10 0.10
(0.95)
MOLDING AREA
(1.90)
0.2 M A B
TOP VIEW
BOTTOM VIEW
Units : Millimeters
10.00 0.10
0.80 x 11 = 8.80
# A1 INDEX MARK
4.40
0.80
10.00 0.10
12 11 10 9
2.00
8
(Datum A) A
B
0.80
C
D
(Datum B) E
0.80 x 16 = 12.80
H
J
K
0.80
6.40
M
N
P
R
T
V
0.35 0.05
1.10 0.10
0.95
136-0.45 Solder ball
(Post reflow 0.50 0.05)
TOP VIEW
0.2 M A B
- 14 -
1.90
MOLDING AREA
BOTTOM VIEW
14.00 0.10
F
G
14.00 0.10
#A1
13.30 0.10
0.80 x 15 = 12.00
0.40
0.80
13.30 0.10
(Datum B)
6.00
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
(Datum A)
Apr. 2010
Product Guide
Consumer Memory
- 15 -