VLSI Technology And Applications - 10B11EC612

Tutorial Sheet 1

1. Determine the intrinsic carrier concentration of germanium if its intrinsic resistivity at 300 K is 0.47 Ohm-m. Given that the electron and hole mobilities are 0.39 m2/Vs and 0.19 m2/Vs respectively. 2. Determine the resistivity of a N-type germanium at 300 K with donor density of 1020/m3. All donors are assumed to be ionized. Given that n=0.38 m2/Vs. 3. At 300K, a sample of germanium is doped with phosphorous to a density of 2*1013 /cm3 as well as with boron to a density of 3.5*106 /cm3. Suppose all the dopants are ionized. Given: n=3900 cm2/Vs, p=1900 cm2/Vs, ni=2.4*1013 /cm3. Determine: i) Electron and hole concentrations in the sample. ii) Conductivity and resistivity of the sample. 4. A sample of silicon is doped with arsenic to a donor density of Nd=4*1017 /cm3 a) Find the majority carrier density. b) Find the minority carrier density. 5. A region of silicon is doped with both phosphorous and boron .The phosphorous doping is Nd=2*1016 /cm3 while the boron doping level is Na=6*1018 /cm3. Determine the polarity (n or p) of the region and find the carrier densities. 6. A sample of Si is doped with boron atoms at an acceptor density of Na=4*1014 /cm3. Given n=1373.36 cm2/Vs, p=485.6 cm2/Vs a) Find the majority and minority carrier densities. b) Find the resistivity of the sample. c) Suppose the region has the dimension of (width, thickness, length respectively) 2m*0.5m*100m. Find the maximum resistance.