VLSI Technology And Applications - 10B11EC612

Tutorial Sheet 3

1. Consider an nMOSFET that has a gate oxide thickness tox=12 nm and an electron mobility of n=540 cm2/Vsec. Find the process transconductance. 2. Consider an nMOSFET with the following characteristics: tox=10 nm, n=520 cm2/Vsec , W/L=8, VTn=0.7 V (a) Calculate the drain current for VGS=2 V, VDS= 2 V. (b) If the voltage values are VDS=1.2 V and VGS=2 V, find the operating region and current value. 3. Consider an nMOSFET where VTon=0.7 V, =0.08 V1/2 and 2F=0.58 V. Calculate the threshold voltage for the given bodybias voltage VSB = 1 V, 2 V and 3 V. 4. An nMOSFET has a gate oxide with a thickness of tox=120 . The ptype bulk region is doped with boron at a density of Na=8x1014 cm3. It is given that VT0n=0.55 V. (a) Calculate the bodybias coefficient . (b) What is the device threshold voltage if a bodybias voltage VSB =2 V is applied? 5. An nMOSFET with W=20 m and L=0.5 m is built in a process where kn=120 A/V2 and VTn=0.65 V. The voltages are set to a value of VGS = VDS= VDD = 5 V. (a) Is the transistor saturated or nonsaturated? (b) Calculate the drainsource resistance. 6. An nchannel MOSFET with W=10 m and L=0.35 m is built in a process where kn=110 A/V2 and VTn=0.7 V. Assume VSB=0 V. (a) Find the current if the voltages are VDS=1 V, VGS=2 V. (b) Find the current if the voltages are VDS=2 V, VGS=2 V.