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  • Common Base (BJT) - Common Gate (MOSFET) Circuits

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    Utpal
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    The document summarizes common-base BJT and common-gate MOSFET circuits. For the common-base BJT circuit, it provides expressions for input impedance Zin, voltage gain AV, and current gain Ai. For the common-gate MOSFET, it gives the voltage gain expression and defines the input resistance RIN and output resistance ROUT. The output impedance of the common-base circuit is also derived.

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    The document summarizes common-base BJT and common-gate MOSFET circuits. For the common-base BJT circuit, it provides expressions for input impedance Zin, voltage gain AV, and current gain Ai. For the common-gate MOSFET, it gives the voltage gain expression and defines the input resistance RIN and output resistance ROUT. The output impedance of the common-base circuit is also derived.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Scarica in formato PDF o leggi online su Scribd
    Segnala contenuti inappropriati
    1K visualizzazioni3 pagine

    Common Base (BJT) - Common Gate (MOSFET) Circuits

    Caricato da

    Utpal
    The document summarizes common-base BJT and common-gate MOSFET circuits. For the common-base BJT circuit, it provides expressions for input impedance Zin, voltage gain AV, and current gain Ai. For the common-gate MOSFET, it gives the voltage gain expression and defines the input resistance RIN and output resistance ROUT. The output impedance of the common-base circuit is also derived.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Scarica in formato PDF o leggi online su Scribd
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    di 3

    Sheet

    1 of 3

    Common-Base/Gate Circuits

    Common-Base BJT circuit

    The figure below shows the simplied ‘Pi’ model of a common-base BJT.
    rce

    e ib(β+1) C
    E

    Vin c
    b Zout Vin β.ib or
    RL ib Vout
    Zin rbe
    Vout gm.Vbe
    B

    VIN i (β + 1).rbe 1 ICQ


    RIN = = b = rbe = where gm =
    IIN ib (β + 1) gm VT

    VOUT β.ib .rce β.rce rce ICQ VA VA 1


    AV = = = ≈ = . = (as = rce )
    VIN ib (β + 1)rbe (β + 1)rbe rbe VT ICQ VT gm

    IOUT β.ib β
    Ai = = = ≈ 1
    IIN ib (β + 1)) β +1
    Sheet
    2 of 3

    rce
    iT+β.i

    e C
    E ib iT
    iT
    c
    rbe
    Vin iT-ib
    b Zout β.ib
    RL Vout
    Vout
    Rs
    B

    Vs

    To determine the Output impedance of the circuit we can connect a voltage source (Vs + Rs)
    to the base and ground the input ie the emitter. We then have to resistances in parallel
    connected to the current source β.ib.

    VOUT
    R OUT =
    iT

    VOUT = (i T + β .ib )rce + ib .rbe

    Rs
    Also ib = i T sub into above equation
    rbe + R s

    ⎛ Rs ⎞ Rs
    VOUT = ⎜⎜ iT + β .iT ⎟⎟rce + iT .rbe
    ⎝ rbe + R s ⎠ rce + R s

    VOUT Rs R .r
    R OUT = = rce + β .rce + s be
    iT rbe + R s rbe + R s

    If R s = 0 then R OUT = rce

    If R s = large then R OUT = rce + β .rce + 1 = (β + 1).rce


    Sheet
    3 of 3

    Common-Gate MOSFET Circuit

    rds

    Io
    d
    RL IIN = gmVsg s

    source drain gmVsg


    Vin rdg Vout
    rIN
    Vsg
    Vin
    Vout RL
    gate

    Voltage Gain Av

    VO
    AV = VIN = Vsg
    VIN
    ⎛ r .R ⎞
    VO = gmVsg(rdg //R L ) A V = gm⎜ dg L ⎟
    ⎜r +R ⎟
    ⎝ dg L ⎠

    Input Resistance

    VIN Vgs 1
    R IN = = = = IDλ
    I IN gmVgs gm

    Output Resistance

    As the source is low impedance ie close to ground for ROUT – rds appears to be connected
    across rds to ground.

    VO
    R OUT = = rdg //rds
    IO

    Current Gain Ai

    Ai = 1

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