N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
DESCRIPTION
The STC4606A is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed.

PIN CONFIGURATION SOP-8

FEATURE N-Channel 30V/6.9A, RDS(ON) = 22m (Typ.) @VGS = 10V 30V/7.0A, RDS(ON) = 30m @VGS = 4.5V P-Channel -30V/-6.0A, RDS(ON) = 23m @VGS = -10V -30V/-5.0A, RDS(ON)= 33m @VGS = - 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package

PART MARKING SOP-8

YYear ADate Code

ORDERING INFORMATION Part Number STC4606AS8RG STC4606AS8TG Package SOP-8 SOP-8 Part Marking STC4606 STC4606

Process Code : A ~ Z ; a ~ z STC4606AS8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb Free STC4606AS8TG S8 : SOP-8 ; T : Tube ; G : Pb Free

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1

N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Typical

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient
T10Sec Sready State

Symbol VDSS VGSS TA=25 TA=70 ID IDM IS TA=25 TA=70 PD TJ TSTG RJA

N 30

Unit V V A A A W /W

-30 20 -7.0 -6.0 -35 -4.2 2.0 1.44 150 -55/150

20 6.9 5.8 30 3.0 2. 1.44

62.5 110

62.5 110

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1

N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )

Parameter Static Drain-Source Breakdown Voltage

Symbol

Condition

Min

Typ

Max Unit

VGS=0V,ID=250uA VGS=0V,ID=-250uA VDS=VGS,ID=250 uA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA VDS=0V,VGS=20V Gate Leakage Current IGSS VDS=0V,VGS=20V VDS=24V,VGS=0V IDSS Zero Gate Voltage Drain VDS=-24V,VGS=0V TJ=55 Current VDS=24V,VGS=0V VDS=-24V,VGS=0V VDS5V,VGS=10V On-State Drain Current ID(on) VDS-5V,VGS=-10V VGS=10V, ID=6.9A VGS=-10V,ID=-7.0A Drain-source On-Resistance RDS(on) VGS=4.5V, ID=5.0A VGS=-4.5V,ID=-5.0 A VDS=5V,ID=6.9A Forward Tran Conductance gfs VDS=-15V,ID=-5.9A IS=1.0A,VGS=0V Diode Forward Voltage VSD IS=-1.7A,VGS=0V V(BR)DSS Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd td(on)
tr

N P N P N P N P N P N P N P N P N P N P N P N P N P N P N P N P N P

30 -30 1.0 -1.0

V 3.0 -3.0 100 100 1 -1 5 -5 V nA

uA A

30 -30 0.023
0.030 0.033 0.022

15 13 0.76 -0.76. 13.8 18.5 1.8 2.7 2.0 4.5 4.6 7.7 4.1 5.7 20.6 20.2 5.2 9.5

S 1.0 -1.0 16.6 22.2 nC V

Turn-On Time

Turn-Off Time

td(off)
tf

N-Channel VDS=15V,VGS=10V ID6.9A P-Channel VDS=-15V,VGS=-10V ID5.0A N-Channel VDS=10V,RL=2.2 ID=1A,VGEN=10V RG=3 P-Channel VDS=-10V,RL=2.7 ID=-1A,VGEN=-3V RG=2.7

7 11.5 6 8.5 30 30 8 14

nS

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1

N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
TYPICAL CHARACTERICTICS (N MOS)

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1

N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
TYPICAL CHARACTERICTICS (N MOS)

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1

N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
TYPICAL CHARACTERICTICS (P MOS)

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1

N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
YPICAL CHARACTERICTICS (P MOS)

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1

N&P Pair Enhancement Mode MOSFET

STC4606A

6.9A / -7.0A
SOP-8 PACKAGE OUTLINE

STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606A 2008. V1